SWF10N65K2 MOSFET Datasheet: N-Ch, 650V, 10A. Full specification with pinout and replacement list

SWF10N65K2 Specs and Replacement

Type Designator: SWF10N65K2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO220F

SWF10N65K2 substitution

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SWF10N65K2 datasheet

..1. Size:952K samwin
swf10n65k2 swd10n65k2 swb10n65k2.pdf pdf_icon

SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.3 )@VGS=10V RDS(ON) 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application Charge, LED, PC Power 1. Gate 2. Drain 3. Sou... See More ⇒

5.1. Size:1328K samwin
swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf pdf_icon

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio... See More ⇒

6.1. Size:1319K samwin
swf10n65d swmn10n65d swy10n65d swp10n65d swu10n65d swj10n65d.pdf pdf_icon

SW10N65D N-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFET Features TO-262 TO-262N TO-220F TO-220SF TO-220FT TO-220 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.9 )@VGS=10V Low Gate Charge (Typ 35nC) RDS(ON) 0.9 Improved dv/dt Capability 100% Avalanche Tested 2 Application UPS,Inverter, 1 1 1 2 2 1 1 1 ... See More ⇒

6.2. Size:728K samwin
sw10n65 swp10n65 swf10n65.pdf pdf_icon

SAMWIN SW10N65 N-channel MOSFET TO-220F TO-220 BVDSS 650V Features ID 10.0A High ruggedness RDS(ON) 1.1ohm RDS(ON) (Max 1.1 )@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This... See More ⇒

Detailed specifications: SWD8N80K, SWD9N10V1, SWD9N25D, SWD9N50D, SWF10N50K, SWF10N60D, SWF10N65D, SWF10N65K, AO4468, SWF10N80D, SWF10N80K2, SWF11N65D, SWF12N60D, SWF13N50D, SWF13N60D, SWF13N60K2, SWF13N65D