SWF16N60D
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWF16N60D
Marking Code: SW16N60D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 34.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 68
nC
trⓘ - Rise Time: 59
nS
Cossⓘ -
Output Capacitance: 243
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO220F
SWF16N60D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWF16N60D
Datasheet (PDF)
..1. Size:590K samwin
swf16n60d.pdf
SW16N60D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V High ruggedness Low RDS(ON) (Typ 0.4)@VGS=10V ID : 16A Low Gate Charge (Typ 68nC) RDS(ON) : 0.4 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow
6.1. Size:724K samwin
swf16n60k.pdf
SW16N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 16A High ruggedness Low RDS(ON) (Typ 0.21)@VGS=10V RDS(ON) :0.21 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:LED, Charger, PC Power 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MO
7.1. Size:820K samwin
sw16n65d swf16n65d.pdf
SW16N65DN-channel Enhanced mode TO-220F MOSFETFeaturesTO-220FBVDSS : 650V High ruggedness Low RDS(ON) (Typ 0.46)@VGS=10VID : 16A Low Gate Charge (Typ 68nC)RDS(ON) : 0.46 Improved dv/dt Capability 100% Avalanche Tested21 Application: Charger, Adaptor, LED2311. Gate 2. Drain 3. SourceGeneral Description 3This power MOSFET is produce
7.2. Size:1213K samwin
sw16n65k swp16n65k swf16n65k swb16n65k.pdf
SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source
7.3. Size:820K samwin
swf16n65d.pdf
SW16N65DN-channel Enhanced mode TO-220F MOSFETFeaturesTO-220FBVDSS : 650V High ruggedness Low RDS(ON) (Typ 0.46)@VGS=10VID : 16A Low Gate Charge (Typ 68nC)RDS(ON) : 0.46 Improved dv/dt Capability 100% Avalanche Tested21 Application: Charger, Adaptor, LED2311. Gate 2. Drain 3. SourceGeneral Description 3This power MOSFET is produce
7.4. Size:1143K samwin
swp16n65k swf16n65k swb16n65k.pdf
SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source
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