All MOSFET. SWF17N80K Datasheet

 

SWF17N80K MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWF17N80K
   Marking Code: SW17N80K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TO220F

 SWF17N80K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWF17N80K Datasheet (PDF)

 ..1. Size:697K  samwin
 swf17n80k swp17n80k.pdf

SWF17N80K SWF17N80K

SW17N80K N-channel Enhanced mode TO-220F/TO-220 MOSFET TO-220F TO-220 BVDSS : 800V Features ID : 17A High ruggedness RDS(ON) : 0.31 Low RDS(ON) (Typ 0.31)@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source 3 General Descr

 8.1. Size:595K  samwin
 swf17n50d.pdf

SWF17N80K SWF17N80K

SW17N50D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 500V High ruggedness Low RDS(ON) (Typ 0.29)@VGS=10V ID : 17A Low Gate Charge (Typ 70nC) RDS(ON) : 0.29 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, TV-Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This p

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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