All MOSFET. SWF3N80D Datasheet

 

SWF3N80D Datasheet and Replacement


   Type Designator: SWF3N80D
   Marking Code: SW3N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220F
 

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SWF3N80D Datasheet (PDF)

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SWF3N80D

SW3N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 BVDSS : 800V TO-220F High ruggedness ID : 3A Low RDS(ON) (Typ 3.8)@VGS=10V RDS(ON) : 3.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 Application: DC-DCLEDPC 3 3 3 1 1. Gate 2. Drain 3. Source

Datasheet: SWF20N65D , SWF20N65K , SWF20N70K , SWF2N60DB , SWF2N65D , SWF2N65DB , SWF2N70D , SWF2N90K2 , 2N7000 , SWF4N100U , SWF4N50K , SWF4N60D , SWF4N60DA , SWF4N60K , SWF4N65DA , SWF4N65DD , SWF4N65K .

History: NCE20P10J

Keywords - SWF3N80D MOSFET datasheet

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