SWF3N80D Datasheet and Replacement

   Type Designator: SWF3N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220F
      - MOSFET Cross-Reference Search