SWF4N60K Specs and Replacement

Type Designator: SWF4N60K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm

Package: TO220F

SWF4N60K substitution

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SWF4N60K datasheet

 ..1. Size:958K  samwin
 swf4n60k swi4n60k swd4n60k.pdf pdf_icon

SWF4N60K

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 600V High ruggedness ID 4A Low RDS(ON) (Typ 1 )@VGS=10V RDS(ON) 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3 ... See More ⇒

 7.1. Size:965K  samwin
 swf4n60d.pdf pdf_icon

SWF4N60K

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 1 2 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche Tested Application A... See More ⇒

 7.2. Size:851K  samwin
 swd4n60da swf4n60da swsi4n60da.pdf pdf_icon

SWF4N60K

SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS 600V ID 4A High ruggedness Low RDS(ON) (Typ3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou... See More ⇒

 7.3. Size:916K  samwin
 swf4n60d swy4n60d swi4n60d swsi4n60d swmi4n60d swd4n60d.pdf pdf_icon

SWF4N60K

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T... See More ⇒

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Detailed specifications: SWF2N65DB, SWF2N70D, SWF2N90K2, SWF3N80D, SWF4N100U, SWF4N50K, SWF4N60D, SWF4N60DA, IRF4905, SWF4N65DA, SWF4N65DD, SWF4N65K, SWF4N65K2, SWF4N70D1, SWF4N70K, SWF4N70K2, SWF4N70L

Keywords - SWF4N60K MOSFET specs

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