All MOSFET. SWH045R02VT Datasheet

 

SWH045R02VT Datasheet and Replacement


   Type Designator: SWH045R02VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 545 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: DFN3X3
 

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SWH045R02VT Datasheet (PDF)

 ..1. Size:925K  samwin
 swh045r02vt.pdf pdf_icon

SWH045R02VT

SW045R02VTN-channel Enhanced mode DFN3*3 MOSFETFeaturesDFN3*3BVDSS : 20V High ruggedness Low RDS(ON) (Typ 4.6m)@VGS=2.5VID : 20A18Low RDS(ON) (Typ 3.7m)@VGS=4.5V2 7RDS(ON) : 4.6m@VGS=2.5VLow RDS(ON) (Typ 3.3m)@VGS=10V635 Low Gate Charge (Typ 50nC) 43.7m@VGS=4.5V Improved dv/dt Capability 3.3m@VGS=10V 100% Avalanche Teste

 9.1. Size:734K  samwin
 swh040r03vlt.pdf pdf_icon

SWH045R02VT

SW040R03VLTFeaturesN-channel Enhanced mode DFN3*3 MOSFET High ruggednessBVDSS : 30VDFN3*3 Low RDS(ON) (Typ 5.5m)@VGS=4.5V(Typ 4.0m)@VGS=10V ID : 65A18 Low Gate Charge (Typ 59nC)RDS(ON) : 5.5m@VGS=4.5V2 7 Improved dv/dt Capability 63 100% Avalanche Tested5 4.0m@VGS=10V4 Application:Synchronous Rectification,DLi Battery Prote

Datasheet: SWF7N70K , SWF830D1 , SWF8N60D , SWF8N65D , SWF8N70K , SWF8N80K , SWF9N50D , SWH040R03VLT , 75N75 , SWH065R03VLT , SWH110R03VT , SWH160R02VT , SWHA018R03VLT , SWHA020R03VLT , SWHA026R03VT , SWHA056R68E7T , SWHA065R03VLT .

History: STI300N4F6 | SRT10N047HD56

Keywords - SWH045R02VT MOSFET datasheet

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