SWH045R02VT Specs and Replacement

Type Designator: SWH045R02VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 545 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: DFN3X3

SWH045R02VT substitution

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SWH045R02VT datasheet

 ..1. Size:925K  samwin
 swh045r02vt.pdf pdf_icon

SWH045R02VT

SW045R02VT N-channel Enhanced mode DFN3*3 MOSFET Features DFN3*3 BVDSS 20V High ruggedness Low RDS(ON) (Typ 4.6m )@VGS=2.5V ID 20A 1 8 Low RDS(ON) (Typ 3.7m )@VGS=4.5V 2 7 RDS(ON) 4.6m @VGS=2.5V Low RDS(ON) (Typ 3.3m )@VGS=10V 6 3 5 Low Gate Charge (Typ 50nC) 4 3.7m @VGS=4.5V Improved dv/dt Capability 3.3m @VGS=10V 100% Avalanche Teste... See More ⇒

 9.1. Size:734K  samwin
 swh040r03vlt.pdf pdf_icon

SWH045R02VT

SW040R03VLT Features N-channel Enhanced mode DFN3*3 MOSFET High ruggedness BVDSS 30V DFN3*3 Low RDS(ON) (Typ 5.5m )@VGS=4.5V (Typ 4.0m )@VGS=10V ID 65A 1 8 Low Gate Charge (Typ 59nC) RDS(ON) 5.5m @VGS=4.5V 2 7 Improved dv/dt Capability 6 3 100% Avalanche Tested 5 4.0m @VGS=10V 4 Application Synchronous Rectification, D Li Battery Prote... See More ⇒

Detailed specifications: SWF7N70K, SWF830D1, SWF8N60D, SWF8N65D, SWF8N70K, SWF8N80K, SWF9N50D, SWH040R03VLT, 18N50, SWH065R03VLT, SWH110R03VT, SWH160R02VT, SWHA018R03VLT, SWHA020R03VLT, SWHA026R03VT, SWHA056R68E7T, SWHA065R03VLT

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