SWHA069R06VT Specs and Replacement

Type Designator: SWHA069R06VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 89 nS

Cossⓘ - Output Capacitance: 442 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DFN5X6

SWHA069R06VT substitution

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SWHA069R06VT datasheet

 ..1. Size:916K  samwin
 swi069r06vt swha069r06vt.pdf pdf_icon

SWHA069R06VT

SW069R06VT N-channel Enhanced mode TO-251/DFN5*6 MOSFET Features TO-251 DFN5*6 BVDSS 60V High ruggedness ID 60A Low RDS(ON) (Typ 7.0m )@VGS=4.5V (Typ 6.0m )@VGS=10V RDS(ON) 7.0m @VGS=4.5V Low Gate Charge (Typ 83nC) Improved dv/dt Capability 6.0m @VGS=10V 1 G(4) D(5,6,7,8) 100% Avalanche Tested 2 3 S(1,2,3) D Application... See More ⇒

 ..2. Size:910K  samwin
 swha069r06vt.pdf pdf_icon

SWHA069R06VT

SW069R06VT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 60V High ruggedness ID 60A Low RDS(ON) (Typ 5.7m )@VGS=4.5V 1 8 2 7 (Typ 4.9m )@VGS=10V 6 RDS(ON) 5.7m @VGS=4.5V 3 Low Gate Charge (Typ 84nC) 5 4 Improved dv/dt Capability 4.9m @VGS=10V 100% Avalanche Tested D Application Electronic Ballast, Motor Control Inverter 4.G... See More ⇒

 6.1. Size:784K  samwin
 swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf pdf_icon

SWHA069R06VT

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V ... See More ⇒

 6.2. Size:747K  samwin
 swha069r10vs.pdf pdf_icon

SWHA069R06VT

SW069R10VS N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9m )@VGS=4.5V 1 8 ID 60A Low RDS(ON) (Typ 7m )@VGS=10V 2 7 6 3 RDS(ON) 9m @VGS=4.5V Low Gate Charge (Typ 45nC) 5 4 Improved dv/dt Capability 7m @VGS=10V 100% Avalanche Tested Application Li Battery Protect Board, D Synchronous ... See More ⇒

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Detailed specifications: SWH065R03VLT, SWH110R03VT, SWH160R02VT, SWHA018R03VLT, SWHA020R03VLT, SWHA026R03VT, SWHA056R68E7T, SWHA065R03VLT, 75N75, SWHA106R95VS, SWHA110R06VT, SWHA120R45VT, SWHA130R06VT, SWHA13N65K2, SWHA15N04V, SWHA35N10V, SWHA40N06V

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