SWHA13N65K2 Datasheet and Replacement

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS : 650V High ruggedness 5 ID : 13A 1 8 Low RDS(ON) (Typ 0.24) 2 7 6 @VGS=10V 3 RDS(ON) : 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3

SW130R06VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness SOP-8 DFN5*6 TO-251 BVDSS : 60V Low RDS(ON) (Typ 14m)@VGS=4.5V (Typ 12m)@VGS=10V 5 ID : 58A 6 Low Gate Charge (Typ 55nC) 1 8 7 8 2 7 Improved dv/dt Capability RDS(ON) : 14m@ VGS=4.5V 4 6 3 3 100% Avalanche Tested 4 5 2 12m@ VGS=1

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1

SW110R06VTN-channel Enhanced mode SOP8/DFN5*6 MOSFETFeaturesSOP8 DFN5*6 BVDSS : 60V High ruggednessID : 11A1 85 Low RDS(ON) (Typ 11m)@VGS=4.5V6 2 7(Typ 10m)@VGS=10V 76 RDS(ON) : 11m@VGS=4.5V384 5 Low Gate Charge (Typ 69nC)410m@VGS=10V3 Improved dv/dt Capability 2 100% Avalanche Tested 1D Application: Electronic Ballast,

SW120R45VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness DFN5*6 TO-251 SOP-8 BVDSS : 45V Low RDS(ON) (Typ 12m)@VGS=4.5V (Typ 10.5m)@VGS=10V 5 ID : 12A 6 1 8 7 Low Gate Charge (Typ 45nC) 8 2 7 RDS(ON) : 12m@VGS=4.5V Improved dv/dt Capability 6 3 4 4 5 100% Avalanche Tested 3 10.5m@VGS

SW15N04V N-channel Enhanced mode SOP8/DFN5*6 MOSFET Features BVDSS : 40V DFN5*6 SOP8 5 ID : 15A High ruggedness 6 1 8 7 Low RDS(ON) (Typ 6.5m)@VGS=4.5V 2 7 8 RDS(ON) : 6.5m@ VGS=4.5V 6 3 (Typ 5.8m)@VGS=10V 4 3 4 5 5.8m @ VGS=10V Low Gate Charge (Typ 49nC) 2 1 Improved dv/dt Capability D 100% Avalanche Tested

SW106R95VS N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS : 95V DFN5*6 High ruggedness ID : 8A Low RDS(ON) (Typ 12.3m)@VGS=4.5V 1 8 (Typ 11.5m)@VGS=10V RDS(ON) : 12.3m@VGS=4.5V 2 7 Low Gate Charge (Typ 123nC) 6 3 11.5m@VGS=10V Improved dv/dt Capability 5 4 100% Avalanche Tested D Application:Synchronous Re

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1

SW120R45VTN-channel Enhanced mode DFN5*6 MOSFETFeatures High ruggednessDFN5*6BVDSS : 45V Low RDS(ON) (Typ 12m)@VGS=4.5V(Typ 10.5m)@VGS=10VID : 38A1 8 Low Gate Charge (Typ 45nC)2 7RDS(ON) : 12m@VGS=4.5V Improved dv/dt Capability 634 5 100% Avalanche Tested10.5m@VGS=10V Application: DC-DC converter, Motor Control,Synchronous Rect