All MOSFET. SWHA80N06V1 Datasheet

 

SWHA80N06V1 Datasheet and Replacement


   Type Designator: SWHA80N06V1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 371 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DFN5X6
 
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SWHA80N06V1 Datasheet (PDF)

 ..1. Size:718K  samwin
 swha80n06v1.pdf pdf_icon

SWHA80N06V1

SW80N06V1 N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS : 60V High ruggedness ID : 14A Low RDS(ON) (Typ 6.6m)@VGS=4.5V 1 8 (Typ 5.4m)@VGS=10V 2 7 RDS(ON) : 6.6m@VGS=4.5V 6 3 Low Gate Charge (Typ 94nC) 5 4 5.4m@VGS=10V Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, D

 6.1. Size:825K  samwin
 swha80n08v1.pdf pdf_icon

SWHA80N06V1

SW80N08V1 N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS : 80V DFN5*6 High ruggedness ID : 11A Low RDS(ON) (Typ 9.9m)@VGS=4.5V 1 8 (Typ 8.9m)@VGS=10V RDS(ON) : 9.9m @VGS=4.5V 2 7 Low Gate Charge (Typ 79nC) 6 3 5 8.9m @VGS=10V 4 Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification,

Datasheet: SWHA130R06VT , SWHA13N65K2 , SWHA15N04V , SWHA35N10V , SWHA40N06V , SWHA50P03 , SWHA60N04V , SWHA7N65M , EMB04N03H , SWHA80N08V1 , SWHC13N65K2 , SWI051R08ES , SWI055R03VT , SWI069R06VT , SWI075R06ET , SWI085R06VS , SWI100R10VT .

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