All MOSFET. SWHA80N06V1 Datasheet

 

SWHA80N06V1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWHA80N06V1
   Marking Code: SW80N06V1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 371 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DFN5X6

 SWHA80N06V1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWHA80N06V1 Datasheet (PDF)

 ..1. Size:718K  samwin
 swha80n06v1.pdf

SWHA80N06V1 SWHA80N06V1

SW80N06V1 N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS : 60V High ruggedness ID : 14A Low RDS(ON) (Typ 6.6m)@VGS=4.5V 1 8 (Typ 5.4m)@VGS=10V 2 7 RDS(ON) : 6.6m@VGS=4.5V 6 3 Low Gate Charge (Typ 94nC) 5 4 5.4m@VGS=10V Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, D

 6.1. Size:825K  samwin
 swha80n08v1.pdf

SWHA80N06V1 SWHA80N06V1

SW80N08V1 N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS : 80V DFN5*6 High ruggedness ID : 11A Low RDS(ON) (Typ 9.9m)@VGS=4.5V 1 8 (Typ 8.9m)@VGS=10V RDS(ON) : 9.9m @VGS=4.5V 2 7 Low Gate Charge (Typ 79nC) 6 3 5 8.9m @VGS=10V 4 Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification,

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top