All MOSFET. SWI051R08ES Datasheet

 

SWI051R08ES Datasheet and Replacement


   Type Designator: SWI051R08ES
   Marking Code: SW051R08ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 126 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44 nC
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 889 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO251
 

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SWI051R08ES Datasheet (PDF)

 ..1. Size:614K  samwin
 swi051r08es swd051r08es.pdf pdf_icon

SWI051R08ES

SW051R08ES N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS : 80V TO-251 TO-252 ID : 90A High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V RDS(ON) : 5.6m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application:Synchronous Rectification, 2 3 3 1 Li Battery Protect Board, Inv

 9.1. Size:659K  samwin
 swd055r03vt swi055r03vt.pdf pdf_icon

SWI051R08ES

SW055R03VTN-channel Enhanced mode TO-252/TO-251 MOSFETFeaturesBVDSS : 30VTO-252 TO-251 High ruggednessID : 80A Low RDS(ON) (Typ 6.2m)@VGS=4.5VRDS(ON) : 6.2m@VGS=4.5V(Typ 4.4m)@VGS=10V Low Gate Charge (Typ 25nC)4.4m@VGS=10V Improved dv/dt Capability 1122 100% Avalanche Tested 233 Application:DC-DC Converter,Motor ControlS

Datasheet: SWHA35N10V , SWHA40N06V , SWHA50P03 , SWHA60N04V , SWHA7N65M , SWHA80N06V1 , SWHA80N08V1 , SWHC13N65K2 , MMD60R360PRH , SWI055R03VT , SWI069R06VT , SWI075R06ET , SWI085R06VS , SWI100R10VT , SWI110R06VT , SWI120R45VT , SWI130R06VT .

History: NCEP12T10F | JMSL0302AU | HRP80N08K | SIS407ADN | NCE30PD08S | RU30L15H

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