SWI051R08ES Specs and Replacement

Type Designator: SWI051R08ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 126 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 889 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO251

SWI051R08ES substitution

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SWI051R08ES datasheet

 ..1. Size:614K  samwin
 swi051r08es swd051r08es.pdf pdf_icon

SWI051R08ES

SW051R08ES N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS 80V TO-251 TO-252 ID 90A High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V RDS(ON) 5.6m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application Synchronous Rectification, 2 3 3 1 Li Battery Protect Board, Inv... See More ⇒

 9.1. Size:659K  samwin
 swd055r03vt swi055r03vt.pdf pdf_icon

SWI051R08ES

SW055R03VT N-channel Enhanced mode TO-252/TO-251 MOSFET Features BVDSS 30V TO-252 TO-251 High ruggedness ID 80A Low RDS(ON) (Typ 6.2m )@VGS=4.5V RDS(ON) 6.2m @VGS=4.5V (Typ 4.4m )@VGS=10V Low Gate Charge (Typ 25nC) 4.4m @VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 2 3 3 Application DC-DC Converter,Motor Control S... See More ⇒

Detailed specifications: SWHA35N10V, SWHA40N06V, SWHA50P03, SWHA60N04V, SWHA7N65M, SWHA80N06V1, SWHA80N08V1, SWHC13N65K2, RU7088R, SWI055R03VT, SWI069R06VT, SWI075R06ET, SWI085R06VS, SWI100R10VT, SWI110R06VT, SWI120R45VT, SWI130R06VT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.