All MOSFET. SWI100R10VT Datasheet

 

SWI100R10VT Datasheet and Replacement


   Type Designator: SWI100R10VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 87 nS
   Cossⓘ - Output Capacitance: 259 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
   Package: TO251
 

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SWI100R10VT Datasheet (PDF)

 ..1. Size:836K  samwin
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SWI100R10VT

SW100R10VT N-channel Enhanced mode TO-220/TO-251/TO-262 MOSFET Features TO-220 TO-251 TO-262 BVDSS : 100V High ruggedness ID : 69A Low RDS(ON) (Typ 11m)@VGS=4.5V (Typ 9.5m)@VGS=10V RDS(ON) : 11m @VGS=4.5V Low Gate Charge (Typ 73nC) 9.5m @VGS=10V Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 2 3 3 3

Datasheet: SWHA80N06V1 , SWHA80N08V1 , SWHC13N65K2 , SWI051R08ES , SWI055R03VT , SWI069R06VT , SWI075R06ET , SWI085R06VS , 5N50 , SWI110R06VT , SWI120R45VT , SWI130R06VT , SWI13N60K2 , SWI13N65K2 , SWI160R12VT , SWI19N10 , SWI1N55D .

History: MMSF7P03HDR2G | SSM5H01TU | IPI45N04S4L-08 | HCA90R300 | BSS806N | NCEP60ND30AG | ISL9N308AD3ST

Keywords - SWI100R10VT MOSFET datasheet

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