SWI100R10VT Specs and Replacement

Type Designator: SWI100R10VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 87 nS

Cossⓘ - Output Capacitance: 259 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm

Package: TO251

SWI100R10VT substitution

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SWI100R10VT datasheet

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 swp100r10vt swi100r10vt swu100r10vt.pdf pdf_icon

SWI100R10VT

SW100R10VT N-channel Enhanced mode TO-220/TO-251/TO-262 MOSFET Features TO-220 TO-251 TO-262 BVDSS 100V High ruggedness ID 69A Low RDS(ON) (Typ 11m )@VGS=4.5V (Typ 9.5m )@VGS=10V RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 73nC) 9.5m @VGS=10V Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 2 3 3 3 ... See More ⇒

Detailed specifications: SWHA80N06V1, SWHA80N08V1, SWHC13N65K2, SWI051R08ES, SWI055R03VT, SWI069R06VT, SWI075R06ET, SWI085R06VS, IRFP064N, SWI110R06VT, SWI120R45VT, SWI130R06VT, SWI13N60K2, SWI13N65K2, SWI160R12VT, SWI19N10, SWI1N55D

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