SWI100R10VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWI100R10VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 69 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 87 nS
Cossⓘ - Output Capacitance: 259 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
Package: TO251
SWI100R10VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWI100R10VT Datasheet (PDF)
swp100r10vt swi100r10vt swu100r10vt.pdf
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SW100R10VT N-channel Enhanced mode TO-220/TO-251/TO-262 MOSFET Features TO-220 TO-251 TO-262 BVDSS : 100V High ruggedness ID : 69A Low RDS(ON) (Typ 11m)@VGS=4.5V (Typ 9.5m)@VGS=10V RDS(ON) : 11m @VGS=4.5V Low Gate Charge (Typ 73nC) 9.5m @VGS=10V Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 2 3 3 3
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .