SWI120R45VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWI120R45VT
Marking Code: SW120R45VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 182 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO251
SWI120R45VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWI120R45VT Datasheet (PDF)
swk120r45vt swha120r45vt swi120r45vt.pdf
SW120R45VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness DFN5*6 TO-251 SOP-8 BVDSS : 45V Low RDS(ON) (Typ 12m)@VGS=4.5V (Typ 10.5m)@VGS=10V 5 ID : 12A 6 1 8 7 Low Gate Charge (Typ 45nC) 8 2 7 RDS(ON) : 12m@VGS=4.5V Improved dv/dt Capability 6 3 4 4 5 100% Avalanche Tested 3 10.5m@VGS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SKI06073 | SIA810DJ | STP55N05L | IRFS151
History: SKI06073 | SIA810DJ | STP55N05L | IRFS151
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