All MOSFET. SWI120R45VT Datasheet

 

SWI120R45VT Datasheet and Replacement


   Type Designator: SWI120R45VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO251
 

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SWI120R45VT Datasheet (PDF)

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SWI120R45VT

SW120R45VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness DFN5*6 TO-251 SOP-8 BVDSS : 45V Low RDS(ON) (Typ 12m)@VGS=4.5V (Typ 10.5m)@VGS=10V 5 ID : 12A 6 1 8 7 Low Gate Charge (Typ 45nC) 8 2 7 RDS(ON) : 12m@VGS=4.5V Improved dv/dt Capability 6 3 4 4 5 100% Avalanche Tested 3 10.5m@VGS

Datasheet: SWHC13N65K2 , SWI051R08ES , SWI055R03VT , SWI069R06VT , SWI075R06ET , SWI085R06VS , SWI100R10VT , SWI110R06VT , BS170 , SWI130R06VT , SWI13N60K2 , SWI13N65K2 , SWI160R12VT , SWI19N10 , SWI1N55D , SWI1N60 , SWI200R10VT .

History: IRFHM8363PBF | IRF7101 | STD17NF25 | KU310N10D | IRF622FI | NCEP60ND30AG | JST2300

Keywords - SWI120R45VT MOSFET datasheet

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