SWI160R12VT Specs and Replacement

Type Designator: SWI160R12VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 204 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO251

SWI160R12VT substitution

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SWI160R12VT datasheet

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 swi160r12vt swd160r12vt.pdf pdf_icon

SWI160R12VT

SW160R12VT N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 120V High ruggedness ID 50A Low RDS(ON) (Typ 18.3m )@VGS=4.5V Low RDS(ON) (Typ 16.4m )@VGS=10V RDS(ON) 18.3m @VGS=4.5V Low Gate Charge (Typ 64nC) 16.4m @VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 3 2 Application Synchronous Rectifica... See More ⇒

Detailed specifications: SWI075R06ET, SWI085R06VS, SWI100R10VT, SWI110R06VT, SWI120R45VT, SWI130R06VT, SWI13N60K2, SWI13N65K2, IRF840, SWI19N10, SWI1N55D, SWI1N60, SWI200R10VT, SWI20N20D, SWI230R45VT, SWI2N60DC, SWI4N60D

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.