All MOSFET. SWI160R12VT Datasheet

 

SWI160R12VT Datasheet and Replacement


   Type Designator: SWI160R12VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 204 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO251
      - MOSFET Cross-Reference Search

 

SWI160R12VT Datasheet (PDF)

 ..1. Size:691K  samwin
 swi160r12vt swd160r12vt.pdf pdf_icon

SWI160R12VT

SW160R12VTN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 120V High ruggednessID : 50A Low RDS(ON) (Typ 18.3m)@VGS=4.5VLow RDS(ON) (Typ 16.4m)@VGS=10VRDS(ON) : 18.3m@VGS=4.5V Low Gate Charge (Typ 64nC)16.4m@VGS=10V Improved dv/dt Capability 1 12 2 100% Avalanche Tested3 3 2 Application:Synchronous Rectifica

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDMS9620S | WMM11N80M3 | IRFI7536G

Keywords - SWI160R12VT MOSFET datasheet

 SWI160R12VT cross reference
 SWI160R12VT equivalent finder
 SWI160R12VT lookup
 SWI160R12VT substitution
 SWI160R12VT replacement

 

 
Back to Top

 


 
.