All MOSFET. SWI160R12VT Datasheet

 

SWI160R12VT Datasheet and Replacement


   Type Designator: SWI160R12VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 204 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO251
 

 SWI160R12VT substitution

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SWI160R12VT Datasheet (PDF)

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SWI160R12VT

SW160R12VTN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 120V High ruggednessID : 50A Low RDS(ON) (Typ 18.3m)@VGS=4.5VLow RDS(ON) (Typ 16.4m)@VGS=10VRDS(ON) : 18.3m@VGS=4.5V Low Gate Charge (Typ 64nC)16.4m@VGS=10V Improved dv/dt Capability 1 12 2 100% Avalanche Tested3 3 2 Application:Synchronous Rectifica

Datasheet: SWI075R06ET , SWI085R06VS , SWI100R10VT , SWI110R06VT , SWI120R45VT , SWI130R06VT , SWI13N60K2 , SWI13N65K2 , IRF840 , SWI19N10 , SWI1N55D , SWI1N60 , SWI200R10VT , SWI20N20D , SWI230R45VT , SWI2N60DC , SWI4N60D .

History: AOD4144 | IRFP151FI | TK19A50W | RUF015N02TL | KTK211 | WFU2N65L

Keywords - SWI160R12VT MOSFET datasheet

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