SWI19N10 Specs and Replacement

Type Designator: SWI19N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 91.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO251

SWI19N10 substitution

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SWI19N10 datasheet

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SWI19N10

SW19N10 N-channel Enhanced mode TO-220/TO-252/TO-251 MOSFET Features BVDSS 100V TO-220 TO-252 TO-251 ID 19A High ruggedness Low RDS(ON) (Typ 0.1 )@VGS=10V RDS(ON) 0.1 Low Gate Charge (Typ 15nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application Synchronous Rectification, 3 3 3 Li Battery Protect Boa... See More ⇒

Detailed specifications: SWI085R06VS, SWI100R10VT, SWI110R06VT, SWI120R45VT, SWI130R06VT, SWI13N60K2, SWI13N65K2, SWI160R12VT, 20N60, SWI1N55D, SWI1N60, SWI200R10VT, SWI20N20D, SWI230R45VT, SWI2N60DC, SWI4N60D, SWI4N60K

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.