All MOSFET. SWI200R10VT Datasheet

 

SWI200R10VT MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWI200R10VT
   Marking Code: SW200R10VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 86 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO251

 SWI200R10VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWI200R10VT Datasheet (PDF)

 ..1. Size:724K  samwin
 swd200r10vt swi200r10vt.pdf

SWI200R10VT SWI200R10VT

SW200R10VT N-channel Enhanced mode TO-252/TO-251 MOSFET Features TO-251 TO-252 BVDSS : 100V High ruggedness ID : 36A Low RDS(ON) (Typ 19.5m)@VGS=4.5V RDS(ON) : 19.5m@VGS=4.5V (Typ 18.7m)@VGS=10V Low Gate Charge (Typ 86nC) 18.7m@VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 2 3 Application: Syn

 9.1. Size:703K  samwin
 swd20n20d swi20n20d.pdf

SWI200R10VT SWI200R10VT

SW20N20D N-channel Enhanced mode TO-252/TO-251 MOSFET TO-252 TO-251 Features BVDSS : 200V ID : 20A High ruggedness Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application:LED,DC-DC 1 1. Gate 2. Drain 3. Source 3 General Description Th

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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