All MOSFET. SWI200R10VT Datasheet

 

SWI200R10VT Datasheet and Replacement


   Type Designator: SWI200R10VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO251
 

 SWI200R10VT substitution

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SWI200R10VT Datasheet (PDF)

 ..1. Size:724K  samwin
 swd200r10vt swi200r10vt.pdf pdf_icon

SWI200R10VT

SW200R10VT N-channel Enhanced mode TO-252/TO-251 MOSFET Features TO-251 TO-252 BVDSS : 100V High ruggedness ID : 36A Low RDS(ON) (Typ 19.5m)@VGS=4.5V RDS(ON) : 19.5m@VGS=4.5V (Typ 18.7m)@VGS=10V Low Gate Charge (Typ 86nC) 18.7m@VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 2 3 Application: Syn

 9.1. Size:703K  samwin
 swd20n20d swi20n20d.pdf pdf_icon

SWI200R10VT

SW20N20D N-channel Enhanced mode TO-252/TO-251 MOSFET TO-252 TO-251 Features BVDSS : 200V ID : 20A High ruggedness Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application:LED,DC-DC 1 1. Gate 2. Drain 3. Source 3 General Description Th

Datasheet: SWI120R45VT , SWI130R06VT , SWI13N60K2 , SWI13N65K2 , SWI160R12VT , SWI19N10 , SWI1N55D , SWI1N60 , 50N06 , SWI20N20D , SWI230R45VT , SWI2N60DC , SWI4N60D , SWI4N60K , SWI4N65DB , SWI4N65DC , SWI4N65K .

History: MTB6D0N03AH8 | OSG50R1K5DF | MTB6D0N03ATH8 | CS50N06 | IPP06CN10LG | CS20N60 | MTB6D0N03ATV8

Keywords - SWI200R10VT MOSFET datasheet

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