All MOSFET. SWI20N20D Datasheet

 

SWI20N20D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWI20N20D
   Marking Code: SW20N20D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 186.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 188 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO251

 SWI20N20D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWI20N20D Datasheet (PDF)

 ..1. Size:703K  samwin
 swd20n20d swi20n20d.pdf

SWI20N20D SWI20N20D

SW20N20D N-channel Enhanced mode TO-252/TO-251 MOSFET TO-252 TO-251 Features BVDSS : 200V ID : 20A High ruggedness Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application:LED,DC-DC 1 1. Gate 2. Drain 3. Source 3 General Description Th

 9.1. Size:724K  samwin
 swd200r10vt swi200r10vt.pdf

SWI20N20D SWI20N20D

SW200R10VT N-channel Enhanced mode TO-252/TO-251 MOSFET Features TO-251 TO-252 BVDSS : 100V High ruggedness ID : 36A Low RDS(ON) (Typ 19.5m)@VGS=4.5V RDS(ON) : 19.5m@VGS=4.5V (Typ 18.7m)@VGS=10V Low Gate Charge (Typ 86nC) 18.7m@VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 2 3 Application: Syn

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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