SWI20N20D Specs and Replacement

Type Designator: SWI20N20D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 186.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO251

SWI20N20D substitution

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SWI20N20D datasheet

 ..1. Size:703K  samwin
 swd20n20d swi20n20d.pdf pdf_icon

SWI20N20D

SW20N20D N-channel Enhanced mode TO-252/TO-251 MOSFET TO-252 TO-251 Features BVDSS 200V ID 20A High ruggedness Low RDS(ON) (Typ 0.16 )@VGS=10V RDS(ON) 0.16 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application LED,DC-DC 1 1. Gate 2. Drain 3. Source 3 General Description Th... See More ⇒

 9.1. Size:724K  samwin
 swd200r10vt swi200r10vt.pdf pdf_icon

SWI20N20D

SW200R10VT N-channel Enhanced mode TO-252/TO-251 MOSFET Features TO-251 TO-252 BVDSS 100V High ruggedness ID 36A Low RDS(ON) (Typ 19.5m )@VGS=4.5V RDS(ON) 19.5m @VGS=4.5V (Typ 18.7m )@VGS=10V Low Gate Charge (Typ 86nC) 18.7m @VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 2 3 Application Syn... See More ⇒

Detailed specifications: SWI130R06VT, SWI13N60K2, SWI13N65K2, SWI160R12VT, SWI19N10, SWI1N55D, SWI1N60, SWI200R10VT, IRFP460, SWI230R45VT, SWI2N60DC, SWI4N60D, SWI4N60K, SWI4N65DB, SWI4N65DC, SWI4N65K, SWI4N70K

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.