SP8611 Specs and Replacement
Type Designator: SP8611
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 406 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: SMINI8
SP8611 substitution
- MOSFET ⓘ Cross-Reference Search
SP8611 datasheet
sp8611.pdf
Green Product SP8611 a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12.5 @ VGS=4.5V Suface Mount Package. 13.5 @ VGS=4.0V ESD Protected. 20V 8A 14.0 @ VGS=3.7V 15.0 @ VGS=3.1V 18.0 @ VGS=2.5V 5 4 D2 G 2 6 3 ... See More ⇒
Detailed specifications: FDS6681Z , FDS6682 , STA6610 , FDS6690AS , STA4470 , FDS6692A , SP8651 , FDS6699S , IRF1404 , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 , FDS6910 , SP8601 .
Keywords - SP8611 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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