SP8611 Datasheet and Replacement
Type Designator: SP8611
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 406 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: SMINI8
SP8611 substitution
SP8611 Datasheet (PDF)
sp8611.pdf
GreenProductSP8611aS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=4.5VSuface Mount Package.13.5 @ VGS=4.0VESD Protected.20V 8A 14.0 @ VGS=3.7V15.0 @ VGS=3.1V18.0 @ VGS=2.5V 5 4D2 G 26 3
Datasheet: FDS6681Z , FDS6682 , STA6610 , FDS6690AS , STA4470 , FDS6692A , SP8651 , FDS6699S , IRF1404 , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 , FDS6910 , SP8601 .
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