SWI5N30D Specs and Replacement

Type Designator: SWI5N30D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 71 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO251

SWI5N30D substitution

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SWI5N30D datasheet

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SWI5N30D

SW5N30D N-channel Enhanced mode TO-251/TO-220F MOSFET Features TO-251 TO-220F BVDSS 300V High ruggedness ID 5 A Low RDS(ON) (Typ 0.76 )@VGS=10V RDS(ON) 0.76 Low Gate Charge (Typ 12nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application DC-DC,LED 1 1. Gate 2. Drain 3. Source 3 General Descriptio... See More ⇒

Detailed specifications: SWI2N60DC, SWI4N60D, SWI4N60K, SWI4N65DB, SWI4N65DC, SWI4N65K, SWI4N70K, SWI50P03, IRF3710, SWI6N65K, SWI70N10V, SWI7N60K, SWI7N65K, SWI7N65K2, SWI7N70K, SWI80N04V, SWI80N06V1

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