All MOSFET. SWI5N30D Datasheet

 

SWI5N30D Datasheet and Replacement


   Type Designator: SWI5N30D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO251
 

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SWI5N30D Datasheet (PDF)

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SWI5N30D

SW5N30D N-channel Enhanced mode TO-251/TO-220F MOSFET Features TO-251 TO-220F BVDSS : 300V High ruggedness ID : 5 A Low RDS(ON) (Typ 0.76)@VGS=10V RDS(ON) : 0.76 Low Gate Charge (Typ 12nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:DC-DC,LED 1 1. Gate 2. Drain 3. Source 3 General Descriptio

Datasheet: SWI2N60DC , SWI4N60D , SWI4N60K , SWI4N65DB , SWI4N65DC , SWI4N65K , SWI4N70K , SWI50P03 , P55NF06 , SWI6N65K , SWI70N10V , SWI7N60K , SWI7N65K , SWI7N65K2 , SWI7N70K , SWI80N04V , SWI80N06V1 .

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