SWI70N10V Specs and Replacement

Type Designator: SWI70N10V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 95 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 87 nS

Cossⓘ - Output Capacitance: 177 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO251

SWI70N10V substitution

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SWI70N10V datasheet

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SWI70N10V

SW70N10V N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET Features BVDSS 95V TO-251 TO-252 TO-220 High ruggedness ID 70A Low RDS(ON) (Typ 12.4m )@VGS=4.5V Low RDS(ON) (Typ 11.7m )@VGS=10V RDS(ON) 12.4m @VGS=4.5V Low Gate Charge (Typ 117nC) 11.7m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 ... See More ⇒

Detailed specifications: SWI4N60K, SWI4N65DB, SWI4N65DC, SWI4N65K, SWI4N70K, SWI50P03, SWI5N30D, SWI6N65K, AON6414A, SWI7N60K, SWI7N65K, SWI7N65K2, SWI7N70K, SWI80N04V, SWI80N06V1, SWI80N08V1, SWI830D1

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.