All MOSFET. SWI70N10V Datasheet

 

SWI70N10V Datasheet and Replacement


   Type Designator: SWI70N10V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 95 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 87 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO251
 

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SWI70N10V Datasheet (PDF)

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SWI70N10V

SW70N10V N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET Features BVDSS : 95V TO-251 TO-252 TO-220 High ruggedness ID : 70A Low RDS(ON) (Typ 12.4m)@VGS=4.5V Low RDS(ON) (Typ 11.7m)@VGS=10V RDS(ON) : 12.4m @VGS=4.5V Low Gate Charge (Typ 117nC) 11.7m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2

Datasheet: SWI4N60K , SWI4N65DB , SWI4N65DC , SWI4N65K , SWI4N70K , SWI50P03 , SWI5N30D , SWI6N65K , IRFB4110 , SWI7N60K , SWI7N65K , SWI7N65K2 , SWI7N70K , SWI80N04V , SWI80N06V1 , SWI80N08V1 , SWI830D1 .

History: SSM6N7002KFU | PHB160NQ08T

Keywords - SWI70N10V MOSFET datasheet

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