SWI7N60K Specs and Replacement

Type Designator: SWI7N60K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO251

SWI7N60K substitution

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SWI7N60K datasheet

 ..1. Size:843K  samwin
swf7n60k swi7n60k.pdf pdf_icon

SWI7N60K

SW7N60K N-channel Enhanced mode TO-220F/TO-251MOSFET Features TO-220F TO-251 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 0.5 )@VGS=10V RDS(ON) 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Adaptor LED 3 3 3 1. Gate 2. Drain 3. Source 1 General Descr... See More ⇒

 7.1. Size:999K  samwin
sw7n60d swf7n60d swp7n60d swi7n60d swd7n60d.pdf pdf_icon

SWI7N60K

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3 3 TV... See More ⇒

 7.2. Size:1026K  samwin
swf7n60d swp7n60d swi7n60d swd7n60d.pdf pdf_icon

SWI7N60K

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3 ... See More ⇒

 8.1. Size:1527K  samwin
swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf pdf_icon

SWI7N60K

SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF / TO-262N/DFN5*6 MOSFET Features TO-220 TO-251 TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 3 3 3 3 Improved dv/dt Capability D DFN5*6 TO-220F TO-220SF TO-262N 100% Avalan... See More ⇒

Detailed specifications: SWI4N65DB, SWI4N65DC, SWI4N65K, SWI4N70K, SWI50P03, SWI5N30D, SWI6N65K, SWI70N10V, IRFB4115, SWI7N65K, SWI7N65K2, SWI7N70K, SWI80N04V, SWI80N06V1, SWI80N08V1, SWI830D1, SWI8N65D

Keywords - SWI7N60K MOSFET specs

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