SWI80N04V Specs and Replacement

Type Designator: SWI80N04V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 323 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO251

SWI80N04V substitution

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SWI80N04V datasheet

 ..1. Size:658K  samwin
 swi80n04v swd80n04v.pdf pdf_icon

SWI80N04V

SW80N04V N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS 40V TO-251 TO-252 ID 80A High ruggedness Low RDS(ON) Typ 7.2m @VGS=4.5V RDS(ON) 7.2m @VGS=4.5V Typ 6.0m @VGS=10V 6.0m @VGS=10V Low Gate Charge (Typ 49nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 Application LED, Charger, Ada... See More ⇒

 7.1. Size:630K  samwin
 swi80n06v1.pdf pdf_icon

SWI80N04V

SW80N06V1 N-channel Enhanced mode TO-251 MOSFET Features TO-251 BVDSS 60V High ruggedness ID 80A Low RDS(ON) (Typ 6.7m )@VGS=4.5V (Typ 5.5m )@VGS=10V RDS(ON) 6.7m @VGS=4.5V Low Gate Charge (Typ 103nC) 5.5m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 3 2 Application Synchronous Rectification, Li Bat... See More ⇒

 7.2. Size:771K  samwin
 swi80n08v1.pdf pdf_icon

SWI80N04V

SW80N08V1 N-channel Enhanced mode TO-251 MOSFET Features BVDSS 80V TO-251 High ruggedness ID 80A Low RDS(ON) (Typ 10m )@VGS=4.5V (Typ 9m )@VGS=10V RDS(ON) 10m @VGS=4.5V Low Gate Charge (Typ 79nC) 9m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 2 Application Synchronous Rectification, 2 3 Li Battery ... See More ⇒

Detailed specifications: SWI50P03, SWI5N30D, SWI6N65K, SWI70N10V, SWI7N60K, SWI7N65K, SWI7N65K2, SWI7N70K, 7N65, SWI80N06V1, SWI80N08V1, SWI830D1, SWI8N65D, SWI8N80K, SWJ10N65D, SWJ13N65K2, SWJ20N65K

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