SWI80N06V1 MOSFET. Datasheet pdf. Equivalent
Type Designator: SWI80N06V1
Marking Code: SW80N06V1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 103 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 371 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO251
SWI80N06V1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWI80N06V1 Datasheet (PDF)
swi80n06v1.pdf
SW80N06V1 N-channel Enhanced mode TO-251 MOSFET Features TO-251 BVDSS : 60V High ruggedness ID : 80A Low RDS(ON) (Typ 6.7m)@VGS=4.5V (Typ 5.5m)@VGS=10V RDS(ON) : 6.7m@VGS=4.5V Low Gate Charge (Typ 103nC) 5.5m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 3 2 Application: Synchronous Rectification, Li Bat
swi80n04v swd80n04v.pdf
SW80N04V N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS : 40V TO-251 TO-252 ID : 80A High ruggedness Low RDS(ON) Typ 7.2m@VGS=4.5V RDS(ON) : 7.2m@VGS=4.5V Typ 6.0m@VGS=10V 6.0m@VGS=10V Low Gate Charge (Typ 49nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 Application: LED, Charger, Ada
swi80n08v1.pdf
SW80N08V1 N-channel Enhanced mode TO-251 MOSFET Features BVDSS : 80V TO-251 High ruggedness ID : 80A Low RDS(ON) (Typ 10m)@VGS=4.5V (Typ 9m)@VGS=10V RDS(ON) : 10m @VGS=4.5V Low Gate Charge (Typ 79nC) 9m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 2 Application:Synchronous Rectification, 2 3 Li Battery
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
