SWI80N08V1 Specs and Replacement
Type Designator: SWI80N08V1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 312 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
Package: TO251
SWI80N08V1 substitution
- MOSFET ⓘ Cross-Reference Search
SWI80N08V1 datasheet
swi80n08v1.pdf
SW80N08V1 N-channel Enhanced mode TO-251 MOSFET Features BVDSS 80V TO-251 High ruggedness ID 80A Low RDS(ON) (Typ 10m )@VGS=4.5V (Typ 9m )@VGS=10V RDS(ON) 10m @VGS=4.5V Low Gate Charge (Typ 79nC) 9m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 2 Application Synchronous Rectification, 2 3 Li Battery ... See More ⇒
swi80n04v swd80n04v.pdf
SW80N04V N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS 40V TO-251 TO-252 ID 80A High ruggedness Low RDS(ON) Typ 7.2m @VGS=4.5V RDS(ON) 7.2m @VGS=4.5V Typ 6.0m @VGS=10V 6.0m @VGS=10V Low Gate Charge (Typ 49nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 Application LED, Charger, Ada... See More ⇒
swi80n06v1.pdf
SW80N06V1 N-channel Enhanced mode TO-251 MOSFET Features TO-251 BVDSS 60V High ruggedness ID 80A Low RDS(ON) (Typ 6.7m )@VGS=4.5V (Typ 5.5m )@VGS=10V RDS(ON) 6.7m @VGS=4.5V Low Gate Charge (Typ 103nC) 5.5m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 3 2 Application Synchronous Rectification, Li Bat... See More ⇒
Detailed specifications: SWI6N65K, SWI70N10V, SWI7N60K, SWI7N65K, SWI7N65K2, SWI7N70K, SWI80N04V, SWI80N06V1, IRF630, SWI830D1, SWI8N65D, SWI8N80K, SWJ10N65D, SWJ13N65K2, SWJ20N65K, SWJ4N80D, SWJ5N70K
Keywords - SWI80N08V1 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
