All MOSFET. SWI830D1 Datasheet

 

SWI830D1 Datasheet and Replacement


   Type Designator: SWI830D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 101.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.54 Ohm
   Package: TO251
 

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SWI830D1 Datasheet (PDF)

 ..1. Size:1198K  samwin
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SWI830D1

SW830D1 N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFET TO-220 TO-251 TO-252 TO-220F BVDSS : 500V Features ID : 5A High ruggedness RDS(ON) : 1.33 Low RDS(ON) (Typ 1.33)@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 3 Application: DC-DCLEDPC 1 1

Datasheet: SWI70N10V , SWI7N60K , SWI7N65K , SWI7N65K2 , SWI7N70K , SWI80N04V , SWI80N06V1 , SWI80N08V1 , K3569 , SWI8N65D , SWI8N80K , SWJ10N65D , SWJ13N65K2 , SWJ20N65K , SWJ4N80D , SWJ5N70K , SWJ6N90D .

History: 2SK198 | BL12N65A-A | WMB120P06TS | TK5A60W5 | CS4N70FA9D | NCE0260P | SI4848DY

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