SWI830D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: SWI830D1
Marking Code: SW830D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 101.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.54 Ohm
Package: TO251
SWI830D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWI830D1 Datasheet (PDF)
swp830d1 swi830d1 swd830d1 swf830d1.pdf
SW830D1 N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFET TO-220 TO-251 TO-252 TO-220F BVDSS : 500V Features ID : 5A High ruggedness RDS(ON) : 1.33 Low RDS(ON) (Typ 1.33)@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 3 Application: DC-DCLEDPC 1 1
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