SWI830D1 Specs and Replacement
Type Designator: SWI830D1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 101.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.54 Ohm
Package: TO251
SWI830D1 substitution
- MOSFET ⓘ Cross-Reference Search
SWI830D1 datasheet
swp830d1 swi830d1 swd830d1 swf830d1.pdf
SW830D1 N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFET TO-220 TO-251 TO-252 TO-220F BVDSS 500V Features ID 5A High ruggedness RDS(ON) 1.33 Low RDS(ON) (Typ 1.33 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 3 Application DC-DC LED PC 1 1... See More ⇒
Detailed specifications: SWI70N10V, SWI7N60K, SWI7N65K, SWI7N65K2, SWI7N70K, SWI80N04V, SWI80N06V1, SWI80N08V1, IRF9540, SWI8N65D, SWI8N80K, SWJ10N65D, SWJ13N65K2, SWJ20N65K, SWJ4N80D, SWJ5N70K, SWJ6N90D
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
