SWI8N80K Specs and Replacement

Type Designator: SWI8N80K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 181 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO251

SWI8N80K substitution

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SWI8N80K datasheet

 ..1. Size:986K  samwin
 swf8n80k swi8n80k swn8n80k swd8n80k swu8n80k.pdf pdf_icon

SWI8N80K

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID 8A High ruggedness Low RDS(ON) (Typ 0.67 )@VGS=10V RDS(ON) 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application Adapter,LE... See More ⇒

 9.1. Size:1171K  samwin
 swp8n65d swi8n65d swd8n65d swf8n65d swnx8n65d.pdf pdf_icon

SWI8N80K

SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID 8A High ruggedness RDS(ON) 1.1 Low RDS(ON) (Typ 1.1 )@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application Charg... See More ⇒

 9.2. Size:1132K  samwin
 sw8n65db swi8n65db swd8n65db swf8n65db swj8n65db.pdf pdf_icon

SWI8N80K

SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS 650V TO-251 TO-252 TO-220F TO-262N ID 8A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application LED, Charge, PC Power 3 3 3 3 1... See More ⇒

 9.3. Size:1066K  samwin
 swi8n65db swd8n65db swf8n65db swj8n65db.pdf pdf_icon

SWI8N80K

SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS 650V TO-251 TO-252 TO-220F TO-262N ID 8A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application LED, Charger, PC Power 3 3 3 3 1 1. Gate 2. Drain ... See More ⇒

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Detailed specifications: SWI7N65K, SWI7N65K2, SWI7N70K, SWI80N04V, SWI80N06V1, SWI80N08V1, SWI830D1, SWI8N65D, 2SK3878, SWJ10N65D, SWJ13N65K2, SWJ20N65K, SWJ4N80D, SWJ5N70K, SWJ6N90D, SWJ7N65DA, SWJ7N70K

Keywords - SWI8N80K MOSFET specs

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