All MOSFET. SWJ10N65D Datasheet

 

SWJ10N65D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWJ10N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO262

 SWJ10N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWJ10N65D Datasheet (PDF)

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 swf10n65d swmn10n65d swy10n65d swp10n65d swu10n65d swj10n65d.pdf

SWJ10N65D SWJ10N65D

SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SWJ7N65DA

 

 
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