SWJ10N65D Specs and Replacement

Type Designator: SWJ10N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO262

SWJ10N65D substitution

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SWJ10N65D datasheet

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SWJ10N65D

SW10N65D N-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFET Features TO-262 TO-262N TO-220F TO-220SF TO-220FT TO-220 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.9 )@VGS=10V Low Gate Charge (Typ 35nC) RDS(ON) 0.9 Improved dv/dt Capability 100% Avalanche Tested 2 Application UPS,Inverter, 1 1 1 2 2 1 1 1 ... See More ⇒

Detailed specifications: SWI7N65K2, SWI7N70K, SWI80N04V, SWI80N06V1, SWI80N08V1, SWI830D1, SWI8N65D, SWI8N80K, STP75NF75, SWJ13N65K2, SWJ20N65K, SWJ4N80D, SWJ5N70K, SWJ6N90D, SWJ7N65DA, SWJ7N70K, SWJ8N90KU

Keywords - SWJ10N65D MOSFET specs

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