All MOSFET. SWJ10N65D Datasheet

 

SWJ10N65D Datasheet and Replacement


   Type Designator: SWJ10N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO262
 

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SWJ10N65D Datasheet (PDF)

 ..1. Size:1319K  samwin
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SWJ10N65D

SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1

Datasheet: SWI7N65K2 , SWI7N70K , SWI80N04V , SWI80N06V1 , SWI80N08V1 , SWI830D1 , SWI8N65D , SWI8N80K , 12N60 , SWJ13N65K2 , SWJ20N65K , SWJ4N80D , SWJ5N70K , SWJ6N90D , SWJ7N65DA , SWJ7N70K , SWJ8N90KU .

History: NDP508A | 2SK1980 | SI7540ADP | FDP8D5N10C | STD3NK60Z | AP72T03GI-HF | IXFB70N60Q2

Keywords - SWJ10N65D MOSFET datasheet

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