All MOSFET. SWJ20N65K Datasheet

 

SWJ20N65K MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWJ20N65K
   Marking Code: SW20N65K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 277.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 79 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO262

 SWJ20N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWJ20N65K Datasheet (PDF)

 ..1. Size:1121K  samwin
 swp20n65k swf20n65k sww20n65k swj20n65k.pdf

SWJ20N65K SWJ20N65K

SW20N65K N-channel Enhanced mode TO-220/TO-220F/TO-3P/TO-262N MOSFET Features TO-220 TO-220F TO-3P TO-262N BVDSS : 650V High ruggedness ID : 20A Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:LED, Charger, PC Power 3 3 3 3 1. Gat

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