SWJ20N65K Specs and Replacement
Type Designator: SWJ20N65K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 277.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 79 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO262
SWJ20N65K substitution
- MOSFET ⓘ Cross-Reference Search
SWJ20N65K datasheet
swp20n65k swf20n65k sww20n65k swj20n65k.pdf
SW20N65K N-channel Enhanced mode TO-220/TO-220F/TO-3P/TO-262N MOSFET Features TO-220 TO-220F TO-3P TO-262N BVDSS 650V High ruggedness ID 20A Low RDS(ON) (Typ 0.16 )@VGS=10V RDS(ON) 0.16 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application LED, Charger, PC Power 3 3 3 3 1. Gat... See More ⇒
Detailed specifications: SWI80N04V, SWI80N06V1, SWI80N08V1, SWI830D1, SWI8N65D, SWI8N80K, SWJ10N65D, SWJ13N65K2, IRF9540N, SWJ4N80D, SWJ5N70K, SWJ6N90D, SWJ7N65DA, SWJ7N70K, SWJ8N90KU, SWK028P04, SWK028P04VT
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