SWJ6N90D MOSFET. Datasheet pdf. Equivalent
Type Designator: SWJ6N90D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 186.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 124 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO262
SWJ6N90D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWJ6N90D Datasheet (PDF)
swf6n90d swj6n90d.pdf
SW6N90D N-channel Enhanced mode TO-220F/TO-262N MOSFET TO-220F TO-262N Features BVDSS : 900V ID : 6A High ruggedness Low RDS(ON) (Typ 1.8)@VGS=10V RDS(ON) :1.8 Low Gate Charge (Typ 42nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application:UPS, LED, SMPS 1 1. Gate 2. Drain 3. Source 3 General Description
sw6n80d swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf
SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS : 800V TO-262N ID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10V RDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application:LED
swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf
SW6N80DN-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFETFeaturesTO-251N TO-220F TO-252 BVDSS : 800VTO-262 TO-262NID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 211 1 1 1 100% Avalanche Tested22 2 2 233 3 3 3 Application:LED , Charger, SMPS1.
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
