All MOSFET. SWK028P04 Datasheet

 

SWK028P04 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWK028P04
   Marking Code: SW028P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 304 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8

 SWK028P04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWK028P04 Datasheet (PDF)

 ..1. Size:743K  samwin
 swk028p04.pdf

SWK028P04 SWK028P04

SW028P04 P-channel Enhanced mode SOP-8 MOSFET Features SOP-8 BVDSS : -40V High ruggedness Low RDS(ON) (Typ 23m)@VGS=-4.5V D ID : -7.5A D (Typ 19m)@VGS=-10V D RDS(ON) : 23m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S S Improved dv/dt Capability 19m @VGS=-10V S 100% Avalanche Tested G(4) D(5,6,7,8) S(1,2,3) Application:

 0.1. Size:772K  samwin
 swk028p04vt.pdf

SWK028P04 SWK028P04

SW028P04VTP-channel Enhanced mode SOP-8 MOSFETFeaturesSOP-8 BVDSS : -40V High ruggedness Low RDS(ON) (Typ 27m)@VGS=-4.5V ID : -7.5A56(Typ 21m)@VGS=-10V7RDS(ON) : 27m @VGS=-4.5V8 Low Gate Charge (Typ 60nC)4 Improved dv/dt Capability 21m @VGS=-10V3 100% Avalanche Tested 21 Application: DC-DC Converter, DMotor Control4. Gate 5

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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