SWK028P04 Specs and Replacement

Type Designator: SWK028P04

Marking Code: SW028P04

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 48 nC

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 304 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

SWK028P04 substitution

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SWK028P04 datasheet

 ..1. Size:743K  samwin
 swk028p04.pdf pdf_icon

SWK028P04

SW028P04 P-channel Enhanced mode SOP-8 MOSFET Features SOP-8 BVDSS -40V High ruggedness Low RDS(ON) (Typ 23m )@VGS=-4.5V D ID -7.5A D (Typ 19m )@VGS=-10V D RDS(ON) 23m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S S Improved dv/dt Capability 19m @VGS=-10V S 100% Avalanche Tested G(4) D(5,6,7,8) S(1,2,3) Application ... See More ⇒

 0.1. Size:772K  samwin
 swk028p04vt.pdf pdf_icon

SWK028P04

SW028P04VT P-channel Enhanced mode SOP-8 MOSFET Features SOP-8 BVDSS -40V High ruggedness Low RDS(ON) (Typ 27m )@VGS=-4.5V ID -7.5A 5 6 (Typ 21m )@VGS=-10V 7 RDS(ON) 27m @VGS=-4.5V 8 Low Gate Charge (Typ 60nC) 4 Improved dv/dt Capability 21m @VGS=-10V 3 100% Avalanche Tested 2 1 Application DC-DC Converter, D Motor Control 4. Gate 5... See More ⇒

Detailed specifications: SWJ13N65K2, SWJ20N65K, SWJ4N80D, SWJ5N70K, SWJ6N90D, SWJ7N65DA, SWJ7N70K, SWJ8N90KU, SPP20N60C3, SWK028P04VT, SWK083R06VLS, SWK083R06VS, SWK083R06VSM, SWK110R03VT, SWK110R06VT, SWK120R45VT, SWK130R06VT

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