SWK110R03VT Specs and Replacement

Type Designator: SWK110R03VT

Marking Code: SW110R03VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 24 nC

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 173 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: SOP8

SWK110R03VT substitution

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SWK110R03VT datasheet

 ..1. Size:683K  samwin
 swk110r03vt.pdf pdf_icon

SWK110R03VT

SW110R03VT N-channel Enhanced mode SOP8 MOSFET Features BVDSS 30V SOP8 High ruggedness 5 ID 11A 6 Low RDS(ON) (Typ 9.8m )@VGS=4.5V 7 8 RDS(ON) 9.8m @VGS=4.5V Low RDS(ON) (Typ 8.3m )@VGS=10V 4 Low Gate Charge (Typ 24nC) 3 8.3m @VGS=10V Improved dv/dt Capability 2 1 100% Avalanche Tested D Application DC-DC... See More ⇒

 6.1. Size:810K  samwin
 swk110r06vt swha110r06vt.pdf pdf_icon

SWK110R03VT

SW110R06VT N-channel Enhanced mode SOP8/DFN5*6 MOSFET Features SOP8 DFN5*6 BVDSS 60V High ruggedness ID 11A 1 8 5 Low RDS(ON) (Typ 11m )@VGS=4.5V 6 2 7 (Typ 10m )@VGS=10V 7 6 RDS(ON) 11m @VGS=4.5V 3 8 4 5 Low Gate Charge (Typ 69nC) 4 10m @VGS=10V 3 Improved dv/dt Capability 2 100% Avalanche Tested 1 D Application Electronic Ballast,... See More ⇒

Detailed specifications: SWJ7N65DA, SWJ7N70K, SWJ8N90KU, SWK028P04, SWK028P04VT, SWK083R06VLS, SWK083R06VS, SWK083R06VSM, 12N60, SWK110R06VT, SWK120R45VT, SWK130R06VT, SWK15N04V, SWK15N06V, SWK200R10VT, SWK230R45VT, SWK30N04V

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs