All MOSFET. SWK15N06V Datasheet

 

SWK15N06V MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWK15N06V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SOP8

 SWK15N06V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWK15N06V Datasheet (PDF)

 ..1. Size:887K  samwin
swk15n06v.pdf

SWK15N06V
SWK15N06V

SW15N06V N-channel Enhanced mode SOP-8 MOSFET Features BVDSS : 60V SOP-8 D High ruggedness D ID : 15A D Low RDS(ON) (Typ 8.5m)@VGS=4.5V D RDS(ON) : 8.5m@VGS=4.5V (Typ 7.5m)@VGS=10V G Low Gate Charge (Typ 79nC) S 7.5m@VGS=10V S Improved dv/dt Capability S 100% Avalanche Tested G(4) D(5,6,7,8) D Application:DC

 7.1. Size:1004K  samwin
swk15n04v swha15n04v.pdf

SWK15N06V
SWK15N06V

SW15N04V N-channel Enhanced mode SOP8/DFN5*6 MOSFET Features BVDSS : 40V DFN5*6 SOP8 5 ID : 15A High ruggedness 6 1 8 7 Low RDS(ON) (Typ 6.5m)@VGS=4.5V 2 7 8 RDS(ON) : 6.5m@ VGS=4.5V 6 3 (Typ 5.8m)@VGS=10V 4 3 4 5 5.8m @ VGS=10V Low Gate Charge (Typ 49nC) 2 1 Improved dv/dt Capability D 100% Avalanche Tested

 9.1. Size:830K  samwin
swk15p03 swh15p03.pdf

SWK15N06V
SWK15N06V

SW15P03 P-channel Enhanced mode SOP-8/DFN3*3 MOSFET Features BVDSS : -30V SOP-8 DFN3*3 High ruggedness ID : -15A D Low RDS(ON) (Typ 14m)@VGS=-4.5V D D Low RDS(ON) (Typ 10m)@VGS=-10V RDS(ON) : 14m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S 10m @VGS=-10V Improved dv/dt Capability S S 100% Avalanche Tested D App

 9.2. Size:830K  samwin
sw15p03 swk15p03 swh15p03.pdf

SWK15N06V
SWK15N06V

SW15P03 P-channel Enhanced mode SOP-8/DFN3*3 MOSFET Features BVDSS : -30V SOP-8 DFN3*3 High ruggedness ID : -15A D Low RDS(ON) (Typ 14m)@VGS=-4.5V D D Low RDS(ON) (Typ 10m)@VGS=-10V RDS(ON) : 14m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S 10m @VGS=-10V Improved dv/dt Capability S S 100% Avalanche Tested D App

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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