SWMN4N65DD Specs and Replacement

Type Designator: SWMN4N65DD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm

Package: TO220F

SWMN4N65DD substitution

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SWMN4N65DD datasheet

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SWMN4N65DD

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2.4 )@VGS=10V RDS(ON) 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2 ... See More ⇒

Detailed specifications: SWL2N70D, SWMI4N60D, SWMN10N65D, SWMN10N65K, SWMN12N65D, SWMN12N65DA, SWMN15N50D, SWMN15N65J, 2SK3568, SWMN5N60D, SWMN6N65K, SWMN7N65J, SWMN7N65K, SWMN7N90D, SWMN8N65LA, SWN10N50K, SWN10N65K

Keywords - SWMN4N65DD MOSFET specs

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