All MOSFET. SWMN6N65K Datasheet

 

SWMN6N65K Datasheet and Replacement


   Type Designator: SWMN6N65K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F
 

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SWMN6N65K Datasheet (PDF)

 ..1. Size:987K  samwin
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SWMN6N65K

SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS : 650V High ruggedness ID : 6A Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat

Datasheet: SWMN10N65D , SWMN10N65K , SWMN12N65D , SWMN12N65DA , SWMN15N50D , SWMN15N65J , SWMN4N65DD , SWMN5N60D , 13N50 , SWMN7N65J , SWMN7N65K , SWMN7N90D , SWMN8N65LA , SWN10N50K , SWN10N65K , SWN10N80K2 , SWN2N65K .

History: CEB30N15L | BLP04N10-B | RQA0008NXAQS | AM2394NE | FQI6N50TU | S-LNTK2575LT1G | SI4430BDY

Keywords - SWMN6N65K MOSFET datasheet

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