All MOSFET. SWMN7N65J Datasheet

 

SWMN7N65J MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWMN7N65J
   Marking Code: SW7N65J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
   Package: TO220F

 SWMN7N65J Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWMN7N65J Datasheet (PDF)

 ..1. Size:725K  samwin
 swmn7n65j swd7n65j.pdf

SWMN7N65J SWMN7N65J

SW7N65JN-channel Enhanced mode TO-220SF/TO-252 MOSFETFeaturesTO-220SF TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 0.6)@VGS=10VRDS(ON) : 0.6 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested 1 12 22 Application:LED , Charger, PC Power 3 31. Gate 2. Drain 3. Source1General DescriptionThis power MO

 6.1. Size:1527K  samwin
 swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf

SWMN7N65J SWMN7N65J

SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan

 6.2. Size:1524K  samwin
 sw7n65d swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf

SWMN7N65J SWMN7N65J

SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan

 6.3. Size:1121K  samwin
 swf7n65k swmn7n65k swi7n65k swn7n65k swd7n65k swp7n65k.pdf

SWMN7N65J SWMN7N65J

SW7N65K N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO-251N/TO-252/TO-220 MOSFET Features TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220 BVDSS : 650V ID : 7A High ruggedness Low RDS(ON) (Typ 0.5)@VGS=10V RDS(ON) :0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 1 2 2 2 2 2 2 Applica

 6.4. Size:1401K  samwin
 swp7n65d swi7n65d swn7n65d swui7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d swy7n65d.pdf

SWMN7N65J SWMN7N65J

SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO-220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFETFeaturesTO-220 TO-251TO-251N TO-251U TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11 112 2 Low Gate Charge (Typ 30nC) 2 22333 33 Improved dv/dt Capability DTO-220FT TO-262N DFN

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SWN7N65K2 | SWU6N80D | 2SK2397-01MR | SIS430DN

 

 
Back to Top