SWMN8N65LA Specs and Replacement

Type Designator: SWMN8N65LA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220F

SWMN8N65LA substitution

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SWMN8N65LA datasheet

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SWMN8N65LA

SW8N65LA N-channel Enhanced mode TO-220SF MOSFET Features TO-220SF BVDSS 650V ID 8A High ruggedness Low RDS(ON) (Typ 0.6 )@VGS=10V RDS(ON) 0.6 Low Gate Charge (Typ 20nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED, Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This po... See More ⇒

Detailed specifications: SWMN15N50D, SWMN15N65J, SWMN4N65DD, SWMN5N60D, SWMN6N65K, SWMN7N65J, SWMN7N65K, SWMN7N90D, 18N50, SWN10N50K, SWN10N65K, SWN10N80K2, SWN2N65K, SWN2N70D, SWN3N80D, SWN4N50K, SWN4N65DA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.