All MOSFET. SWMN8N65LA Datasheet

 

SWMN8N65LA Datasheet and Replacement


   Type Designator: SWMN8N65LA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F
 

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SWMN8N65LA Datasheet (PDF)

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SWMN8N65LA

SW8N65LA N-channel Enhanced mode TO-220SF MOSFET Features TO-220SF BVDSS : 650V ID : 8A High ruggedness Low RDS(ON) (Typ 0.6)@VGS=10V RDS(ON) : 0.6 Low Gate Charge (Typ 20nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This po

Datasheet: SWMN15N50D , SWMN15N65J , SWMN4N65DD , SWMN5N60D , SWMN6N65K , SWMN7N65J , SWMN7N65K , SWMN7N90D , 18N50 , SWN10N50K , SWN10N65K , SWN10N80K2 , SWN2N65K , SWN2N70D , SWN3N80D , SWN4N50K , SWN4N65DA .

History: SWN10N50K | IPP60R250CP | HFP13N50S | INK0001BC1 | INK0001AU1 | AP9469GM | INJ0011AM1

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