All MOSFET. SWN4N70K2 Datasheet

 

SWN4N70K2 Datasheet and Replacement


   Type Designator: SWN4N70K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO251
 

 SWN4N70K2 substitution

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SWN4N70K2 Datasheet (PDF)

 ..1. Size:907K  samwin
 swf4n70k2 swn4n70k2 swd4n70k2.pdf pdf_icon

SWN4N70K2

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS :700V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.15)@VGS=10V RDS(ON) :1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S

 7.1. Size:1038K  samwin
 sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWN4N70K2

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 7.2. Size:1038K  samwin
 swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWN4N70K2

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 7.3. Size:855K  samwin
 swsi4n70d1 swn4n70d1 swnc4n70d1 swf4n70d1.pdf pdf_icon

SWN4N70K2

SW4N70D1N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFETFeatures TO-220FTO-251S TO-251N TO-251N-S2BVDSS : 700VID : 4A High ruggedness Low RDS(ON) (Typ 2.1)@VGS=10VRDS(ON) : 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested111 1222 2 Application:Adapter,LED,Charger 333 311. Gate

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Datasheet: SWN2N65K , SWN2N70D , SWN3N80D , SWN4N50K , SWN4N65DA , SWN4N65DD , SWN4N65K2 , SWN4N70D1 , IRFZ48N , SWN4N70L , SWN4N80D , SWN4N80K , SWN5N70K , SWN6N60D , SWN6N65K , SWN6N70DB , SWN7N65DA .

History: FQD6N25TF | 2SK1920 | 2SK2286 | NVMFS5A140PLZ | BSC014N03MSG | HTS220C04 | AO3404

Keywords - SWN4N70K2 MOSFET datasheet

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