SWN4N70L Specs and Replacement

Type Designator: SWN4N70L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO251

SWN4N70L substitution

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SWN4N70L datasheet

 ..1. Size:1046K  samwin
 swf4n70l swn4n70l swd4n70l.pdf pdf_icon

SWN4N70L

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour... See More ⇒

 7.1. Size:1038K  samwin
 sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWN4N70L

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2. ... See More ⇒

 7.2. Size:1038K  samwin
 swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWN4N70L

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2. ... See More ⇒

 7.3. Size:855K  samwin
 swsi4n70d1 swn4n70d1 swnc4n70d1 swf4n70d1.pdf pdf_icon

SWN4N70L

SW4N70D1 N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFET Features TO-220F TO-251S TO-251N TO-251N-S2 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 2.1 )@VGS=10V RDS(ON) 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application Adapter,LED,Charger 3 3 3 3 1 1. Gate ... See More ⇒

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Detailed specifications: SWN2N70D, SWN3N80D, SWN4N50K, SWN4N65DA, SWN4N65DD, SWN4N65K2, SWN4N70D1, SWN4N70K2, IRF1405, SWN4N80D, SWN4N80K, SWN5N70K, SWN6N60D, SWN6N65K, SWN6N70DB, SWN7N65DA, SWN7N65DD

Keywords - SWN4N70L MOSFET specs

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