SWN4N70L Datasheet and Replacement

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V ID : 4A High ruggedness Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application: LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

SW4N70D1N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFETFeatures TO-220FTO-251S TO-251N TO-251N-S2BVDSS : 700VID : 4A High ruggedness Low RDS(ON) (Typ 2.1)@VGS=10VRDS(ON) : 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested111 1222 2 Application:Adapter,LED,Charger 333 311. Gate

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS :700V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.15)@VGS=10V RDS(ON) :1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S