SWN4N70L
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWN4N70L
Marking Code: SW4N70L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 28
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO251
SWN4N70L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWN4N70L
Datasheet (PDF)
..1. Size:1046K samwin
swf4n70l swn4n70l swd4n70l.pdf 
SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V ID : 4A High ruggedness Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application: LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour
7.1. Size:1038K samwin
sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf
SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.
7.2. Size:1038K samwin
swi4n70d swn4n70d swd4n70d swf4n70d.pdf
SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.
7.3. Size:855K samwin
swsi4n70d1 swn4n70d1 swnc4n70d1 swf4n70d1.pdf
SW4N70D1N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFETFeatures TO-220FTO-251S TO-251N TO-251N-S2BVDSS : 700VID : 4A High ruggedness Low RDS(ON) (Typ 2.1)@VGS=10VRDS(ON) : 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested111 1222 2 Application:Adapter,LED,Charger 333 311. Gate
7.4. Size:907K samwin
swf4n70k2 swn4n70k2 swd4n70k2.pdf
SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS :700V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.15)@VGS=10V RDS(ON) :1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S
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