All MOSFET. SWP030R04VT Datasheet

 

SWP030R04VT Datasheet and Replacement


   Type Designator: SWP030R04VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 773 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220
 

 SWP030R04VT substitution

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SWP030R04VT Datasheet (PDF)

 ..1. Size:978K  samwin
swp030r04vt swb030r04vt.pdf pdf_icon

SWP030R04VT

SW030R04VTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 BVDSS : 40VTO-263 High ruggednessID : 130A Low RDS(ON) (Typ 3.7m)@VGS=4.5VRDS(ON) : 3.7m@VGS=4.5V(Typ 2.8m)@VGS=10V Low Gate Charge (Typ 120nC)2.8m@VGS=10V Improved dv/dt Capability 1 12 2 100% Avalanche Tested23 3 Application:Power Supply,LED Boost1. Gate 2.

 9.1. Size:752K  samwin
swp036r10e8s swb036r10e8s.pdf pdf_icon

SWP030R04VT

SW036R10E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 175A Low RDS(ON) (Typ 3.8m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :3.8m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification,2233Li Battery Protect Board, Motor Drivers11. Gate 2.

 9.2. Size:832K  samwin
swp035r10e6s.pdf pdf_icon

SWP030R04VT

SW035R10E6SN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 100V High ruggedness Low RDS(ON) (Typ 4.1m)@VGS=10VID : 120A Low Gate Charge (Typ 96nC)RDS(ON) : 4.1m Improved dv/dt Capability 100% Avalanche Tested1 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter21. Gate 2.Drain 3.Source1General Des

 9.3. Size:725K  samwin
swp031r06et swb031r06et.pdf pdf_icon

SWP030R04VT

SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 120A Low RDS(ON) (Typ 3.0m)@VGS=10V RDS(ON) : 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat

Datasheet: SWN7N65M , SWN8N80K , SWNB4N65DA , SWNC4N65DC , SWNC4N65DD , SWNC4N70D1 , SWNX8N65D , SWP020R03VLT , IRFZ44N , SWP031R06ET , SWP035R10E6S , SWP036R10E8S , SWP038R04VT , SWP042R10ES , SWP046R08E8T , SWP046R08E9T , SWP046R68E8T .

History: PMPB19XP | 2SK888 | WMN30N80M3 | 2SJ605-Z | VBZJ12N06 | SFF240J | BUZ83

Keywords - SWP030R04VT MOSFET datasheet

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