SWP035R10E6S Datasheet. Specs and Replacement

Type Designator: SWP035R10E6S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 808 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00475 Ohm

Package: TO220

SWP035R10E6S substitution

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SWP035R10E6S datasheet

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SWP035R10E6S

SW035R10E6S N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 100V High ruggedness Low RDS(ON) (Typ 4.1m )@VGS=10V ID 120A Low Gate Charge (Typ 96nC) RDS(ON) 4.1m Improved dv/dt Capability 100% Avalanche Tested 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 2 1. Gate 2.Drain 3.Source 1 General Des... See More ⇒

 9.1. Size:752K  samwin
 swp036r10e8s swb036r10e8s.pdf pdf_icon

SWP035R10E6S

SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 175A Low RDS(ON) (Typ 3.8m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 3.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drivers 1 1. Gate 2.... See More ⇒

 9.2. Size:725K  samwin
 swp031r06et swb031r06et.pdf pdf_icon

SWP035R10E6S

SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 120A Low RDS(ON) (Typ 3.0m )@VGS=10V RDS(ON) 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat... See More ⇒

 9.3. Size:728K  samwin
 swb038r10es swp038r10es.pdf pdf_icon

SWP035R10E6S

SW038R10ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 100V High ruggedness ID 120A Low RDS(ON) (Typ 3.6m )@VGS=10V RDS(ON) 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 2 Application Synchronous Rectification, 2 3 3 Inverter , Li Battery Protect Bo... See More ⇒

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Detailed specifications: SWNB4N65DA, SWNC4N65DC, SWNC4N65DD, SWNC4N70D1, SWNX8N65D, SWP020R03VLT, SWP030R04VT, SWP031R06ET, IRF740, SWP036R10E8S, SWP038R04VT, SWP042R10ES, SWP046R08E8T, SWP046R08E9T, SWP046R68E8T, SWP050R68E8T, SWP050R95E8S

Keywords - SWP035R10E6S MOSFET specs

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