All MOSFET. SWP042R10ES Datasheet

 

SWP042R10ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWP042R10ES
   Marking Code: SW042R10ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 265.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 106 nC
   trⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 895 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220

 SWP042R10ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWP042R10ES Datasheet (PDF)

 ..1. Size:729K  samwin
 swp042r10es swb042r10es.pdf

SWP042R10ES SWP042R10ES

SW042R10ES N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS : 100V ID : 120A High ruggedness Low RDS(ON) (Typ 4.4m)@VGS=10V RDS(ON) : 4.4m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 1 2 3 Application: Synchronous Rectification, 3 Li Battery Protect Board, In

 9.1. Size:737K  samwin
 swp046r08e8t swb046r08e8t.pdf

SWP042R10ES SWP042R10ES

SW046R08E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggednessID : 150A Low RDS(ON) (Typ 4.8m)@VGS=10VRDS(ON) : 4.8m Low Gate Charge (Typ 183nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3

 9.2. Size:741K  samwin
 swp046r08e9t swb046r08e9t.pdf

SWP042R10ES SWP042R10ES

SW046R08E9TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggedness Low RDS(ON) (Typ 4.5m)@VGS=10V ID : 160A Low Gate Charge (Typ 182nC)RDS(ON) : 4.5m Improved dv/dt Capability 100% Avalanche Tested2 Application:Synchronous Rectification,1 12 2Li Battery Protect Board, Inverter3 311. Gate 2.Drain 3.

 9.3. Size:800K  samwin
 swp046r68e8t swb046r68e8t.pdf

SWP042R10ES SWP042R10ES

SW046R68E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggedness Low RDS(ON) (Typ 4.6m)@VGS=10V ID : 145A Low Gate Charge (Typ 145nC)RDS(ON) : 4.6m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,212 3Li Battery Protect Board, Inverter311. Gate 2.Drain

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSH60N10

 

 
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