SWP042R10ES - параметры транзистора MOSFET, его аналоги, datasheet

SWP042R10ES Datasheet (PDF)

..1. Size:729K samwin
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SW042R10ES N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS : 100V ID : 120A High ruggedness Low RDS(ON) (Typ 4.4m)@VGS=10V RDS(ON) : 4.4m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 1 2 3 Application: Synchronous Rectification, 3 Li Battery Protect Board, In

9.1. Size:737K samwin
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SW046R08E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggednessID : 150A Low RDS(ON) (Typ 4.8m)@VGS=10VRDS(ON) : 4.8m Low Gate Charge (Typ 183nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3

9.2. Size:741K samwin
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SW046R08E9TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggedness Low RDS(ON) (Typ 4.5m)@VGS=10V ID : 160A Low Gate Charge (Typ 182nC)RDS(ON) : 4.5m Improved dv/dt Capability 100% Avalanche Tested2 Application:Synchronous Rectification,1 12 2Li Battery Protect Board, Inverter3 311. Gate 2.Drain 3.

9.3. Size:800K samwin
swp046r68e8t swb046r68e8t.pdf pdf_icon

SW046R68E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggedness Low RDS(ON) (Typ 4.6m)@VGS=10V ID : 145A Low Gate Charge (Typ 145nC)RDS(ON) : 4.6m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,212 3Li Battery Protect Board, Inverter311. Gate 2.Drain

Другие MOSFET... SWNC4N70D1 , SWNX8N65D , SWP020R03VLT , SWP030R04VT , SWP031R06ET , SWP035R10E6S , SWP036R10E8S , SWP038R04VT , IRF540 , SWP046R08E8T , SWP046R08E9T , SWP046R68E8T , SWP050R68E8T , SWP050R95E8S , SWP051R08ES , SWP055R68E7T , SWP056R68E7T .