SWP046R08E8T Datasheet. Specs and Replacement

Type Designator: SWP046R08E8T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TO220

SWP046R08E8T substitution

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SWP046R08E8T datasheet

 ..1. Size:737K  samwin
 swp046r08e8t swb046r08e8t.pdf pdf_icon

SWP046R08E8T

SW046R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 150A Low RDS(ON) (Typ 4.8m )@VGS=10V RDS(ON) 4.8m Low Gate Charge (Typ 183nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3... See More ⇒

 4.1. Size:741K  samwin
 swp046r08e9t swb046r08e9t.pdf pdf_icon

SWP046R08E8T

SW046R08E9T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness Low RDS(ON) (Typ 4.5m )@VGS=10V ID 160A Low Gate Charge (Typ 182nC) RDS(ON) 4.5m Improved dv/dt Capability 100% Avalanche Tested 2 Application Synchronous Rectification, 1 1 2 2 Li Battery Protect Board, Inverter 3 3 1 1. Gate 2.Drain 3.... See More ⇒

 7.1. Size:800K  samwin
 swp046r68e8t swb046r68e8t.pdf pdf_icon

SWP046R08E8T

SW046R68E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 4.6m )@VGS=10V ID 145A Low Gate Charge (Typ 145nC) RDS(ON) 4.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 1 2 3 Li Battery Protect Board, Inverter 3 1 1. Gate 2.Drain ... See More ⇒

 9.1. Size:729K  samwin
 swp042r10es swb042r10es.pdf pdf_icon

SWP046R08E8T

SW042R10ES N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V ID 120A High ruggedness Low RDS(ON) (Typ 4.4m )@VGS=10V RDS(ON) 4.4m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 1 2 3 Application Synchronous Rectification, 3 Li Battery Protect Board, In... See More ⇒

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Detailed specifications: SWNX8N65D, SWP020R03VLT, SWP030R04VT, SWP031R06ET, SWP035R10E6S, SWP036R10E8S, SWP038R04VT, SWP042R10ES, IRF540, SWP046R08E9T, SWP046R68E8T, SWP050R68E8T, SWP050R95E8S, SWP051R08ES, SWP055R68E7T, SWP056R68E7T, SWP058R06E7T

Keywords - SWP046R08E8T MOSFET specs

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