All MOSFET. SWP051R08ES Datasheet

 

SWP051R08ES Datasheet and Replacement


   Type Designator: SWP051R08ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 889 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: TO220
 

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SWP051R08ES Datasheet (PDF)

 ..1. Size:662K  samwin
 swb051r08es swp051r08es.pdf pdf_icon

SWP051R08ES

SW051R08ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS : 80V TO-263 TO-220 ID : 120A High ruggedness Low RDS(ON) (Typ 5.1m)@VGS=10V RDS(ON) : 5.1m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Synchronous Rectification, 2 2 3 3 1 Li Battery Protect Board, Inverte

 9.1. Size:820K  samwin
 swp058r75e7t.pdf pdf_icon

SWP051R08ES

SW058R75E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 75V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 9.2. Size:823K  samwin
 swp058r72e7t.pdf pdf_icon

SWP051R08ES

SW058R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 9.3. Size:726K  samwin
 swp050r68e8t.pdf pdf_icon

SWP051R08ES

SW050R68E8TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 130A Low RDS(ON) (Typ 5.2m)@VGS=10VRDS(ON) : 5.2m Low Gate Charge (Typ 129nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des

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Datasheet: SWP036R10E8S , SWP038R04VT , SWP042R10ES , SWP046R08E8T , SWP046R08E9T , SWP046R68E8T , SWP050R68E8T , SWP050R95E8S , IRF1404 , SWP055R68E7T , SWP056R68E7T , SWP058R06E7T , SWP058R65E7T , SWP058R72E7T , SWP058R75E7T , SWP060R65E7T , SWP060R68E7T .

History: TPC8303 | AON6242 | SM4040DSK | KRLML6401 | ELM5B801QA | AON6266 | HY1310U

Keywords - SWP051R08ES MOSFET datasheet

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