All MOSFET. SWP056R68E7T Datasheet

 

SWP056R68E7T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWP056R68E7T
   Marking Code: SW056R68E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 266 W
   Maximum Drain-Source Voltage |Vds|: 68 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 120 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 107 nC
   Rise Time (tr): 69 nS
   Drain-Source Capacitance (Cd): 362 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
   Package: TO220

 SWP056R68E7T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWP056R68E7T Datasheet (PDF)

 ..1. Size:828K  samwin
 swp056r68e7t swb056r68e7t.pdf

SWP056R68E7T SWP056R68E7T

SW056R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 120A Low RDS(ON) (Typ 5.8m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) :5.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

 9.1. Size:820K  samwin
 swp058r75e7t.pdf

SWP056R68E7T SWP056R68E7T

SW058R75E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 75V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 9.2. Size:823K  samwin
 swp058r72e7t.pdf

SWP056R68E7T SWP056R68E7T

SW058R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 9.3. Size:726K  samwin
 swp050r68e8t.pdf

SWP056R68E7T SWP056R68E7T

SW050R68E8TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 130A Low RDS(ON) (Typ 5.2m)@VGS=10VRDS(ON) : 5.2m Low Gate Charge (Typ 129nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des

 9.4. Size:841K  samwin
 swp050r95e8s swb050r95e8s.pdf

SWP056R68E7T SWP056R68E7T

SW050R95E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 130A Low RDS(ON) (Typ 5.9m)@VGS=10V Low Gate Charge (Typ 50nC)RDS(ON) : 5.9m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Motor Drives11. Gate 2.Dra

 9.5. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf

SWP056R68E7T SWP056R68E7T

SW058R06E7TN-channel Enhanced mode TO-220/TO-263 MOSFETTO-220 TO-263FeaturesBVDSS : 60VID : 120A High ruggedness Low RDS(ON) (Typ 5.8m)@VGS=10VRDS(ON) : 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 21 12 2 100% Avalanche Tested3 3 Application:Telecom, Computer, Inverter11. Gate 2. Drain 3. Source3General Description

 9.6. Size:816K  samwin
 swp055r68e7t swb055r68e7t.pdf

SWP056R68E7T SWP056R68E7T

SW055R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 9.7. Size:662K  samwin
 swb051r08es swp051r08es.pdf

SWP056R68E7T SWP056R68E7T

SW051R08ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS : 80V TO-263 TO-220 ID : 120A High ruggedness Low RDS(ON) (Typ 5.1m)@VGS=10V RDS(ON) : 5.1m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Synchronous Rectification, 2 2 3 3 1 Li Battery Protect Board, Inverte

 9.8. Size:825K  samwin
 swp050r95e8s.pdf

SWP056R68E7T SWP056R68E7T

SW050R95E8SN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 100V High ruggednessID : 130A Low RDS(ON) (Typ 5.9m)@VGS=10V Low Gate Charge (Typ 50nC)RDS(ON) : 5.9m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.SourceGeneral

 9.9. Size:813K  samwin
 swp058r65e7t swb058r65e7t.pdf

SWP056R68E7T SWP056R68E7T

SW058R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 6.1m)@VGS=10V ID : 100A Low Gate Charge (Typ 104nC)RDS(ON) : 6.1m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

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