SWP056R68E7T Datasheet. Specs and Replacement

Type Designator: SWP056R68E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 266 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 362 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO220

SWP056R68E7T substitution

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SWP056R68E7T datasheet

 ..1. Size:828K  samwin
 swp056r68e7t swb056r68e7t.pdf pdf_icon

SWP056R68E7T

SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 120A Low RDS(ON) (Typ 5.8m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 5.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.... See More ⇒

 9.1. Size:820K  samwin
 swp058r75e7t.pdf pdf_icon

SWP056R68E7T

SW058R75E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 75V High ruggedness ID 100A Low RDS(ON) (Typ 6.3m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Des... See More ⇒

 9.2. Size:823K  samwin
 swp058r72e7t.pdf pdf_icon

SWP056R68E7T

SW058R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 72V High ruggedness ID 100A Low RDS(ON) (Typ 6.3m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Des... See More ⇒

 9.3. Size:726K  samwin
 swp050r68e8t.pdf pdf_icon

SWP056R68E7T

SW050R68E8T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 68V High ruggedness ID 130A Low RDS(ON) (Typ 5.2m )@VGS=10V RDS(ON) 5.2m Low Gate Charge (Typ 129nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Des... See More ⇒

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Detailed specifications: SWP042R10ES, SWP046R08E8T, SWP046R08E9T, SWP046R68E8T, SWP050R68E8T, SWP050R95E8S, SWP051R08ES, SWP055R68E7T, IRFB4110, SWP058R06E7T, SWP058R65E7T, SWP058R72E7T, SWP058R75E7T, SWP060R65E7T, SWP060R68E7T, SWP062R08E8T, SWP062R68E7T

Keywords - SWP056R68E7T MOSFET specs

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 SWP056R68E7T replacement

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