All MOSFET. SWP058R72E7T Datasheet

 

SWP058R72E7T Datasheet and Replacement


   Type Designator: SWP058R72E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 223.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 72 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 314 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: TO220
 

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SWP058R72E7T Datasheet (PDF)

 ..1. Size:823K  samwin
 swp058r72e7t.pdf pdf_icon

SWP058R72E7T

SW058R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 6.1. Size:820K  samwin
 swp058r75e7t.pdf pdf_icon

SWP058R72E7T

SW058R75E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 75V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 7.1. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf pdf_icon

SWP058R72E7T

SW058R06E7TN-channel Enhanced mode TO-220/TO-263 MOSFETTO-220 TO-263FeaturesBVDSS : 60VID : 120A High ruggedness Low RDS(ON) (Typ 5.8m)@VGS=10VRDS(ON) : 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 21 12 2 100% Avalanche Tested3 3 Application:Telecom, Computer, Inverter11. Gate 2. Drain 3. Source3General Description

 7.2. Size:813K  samwin
 swp058r65e7t swb058r65e7t.pdf pdf_icon

SWP058R72E7T

SW058R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 6.1m)@VGS=10V ID : 100A Low Gate Charge (Typ 104nC)RDS(ON) : 6.1m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

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Datasheet: SWP046R68E8T , SWP050R68E8T , SWP050R95E8S , SWP051R08ES , SWP055R68E7T , SWP056R68E7T , SWP058R06E7T , SWP058R65E7T , IRFB4227 , SWP058R75E7T , SWP060R65E7T , SWP060R68E7T , SWP062R08E8T , SWP062R68E7T , SWP065R68E7T , SWP066R68E7T , SWP066R72E7T .

History: DMG1013UW | OSG60R380PF

Keywords - SWP058R72E7T MOSFET datasheet

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