SWP058R72E7T MOSFET Datasheet: N-Ch, 72V, 100A. Full specification with pinout and replacement list

SWP058R72E7T Specs and Replacement

   Type Designator: SWP058R72E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 223.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 72 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 314 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: TO220

SWP058R72E7T substitution

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SWP058R72E7T datasheet

..1. Size:823K samwin
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SW058R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 72V High ruggedness ID 100A Low RDS(ON) (Typ 6.3m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Des... See More ⇒

6.1. Size:820K samwin
swp058r75e7t.pdf pdf_icon

SW058R75E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 75V High ruggedness ID 100A Low RDS(ON) (Typ 6.3m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Des... See More ⇒

7.1. Size:833K samwin
swp058r06e7t swb058r06e7t.pdf pdf_icon

SW058R06E7T N-channel Enhanced mode TO-220/TO-263 MOSFET TO-220 TO-263 Features BVDSS 60V ID 120A High ruggedness Low RDS(ON) (Typ 5.8m )@VGS=10V RDS(ON) 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 1 2 2 100% Avalanche Tested 3 3 Application Telecom, Computer, Inverter 1 1. Gate 2. Drain 3. Source 3 General Description ... See More ⇒

7.2. Size:813K samwin
swp058r65e7t swb058r65e7t.pdf pdf_icon

SW058R65E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 65V High ruggedness Low RDS(ON) (Typ 6.1m )@VGS=10V ID 100A Low Gate Charge (Typ 104nC) RDS(ON) 6.1m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.... See More ⇒

Detailed specifications: SWP046R68E8T , SWP050R68E8T , SWP050R95E8S , SWP051R08ES , SWP055R68E7T , SWP056R68E7T , SWP058R06E7T , SWP058R65E7T , AO3400 , SWP058R75E7T , SWP060R65E7T , SWP060R68E7T , SWP062R08E8T , SWP062R68E7T , SWP065R68E7T , SWP066R68E7T , SWP066R72E7T .