All MOSFET. SWP058R72E7T Datasheet

 

SWP058R72E7T Datasheet and Replacement


   Type Designator: SWP058R72E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 223.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 72 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 314 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

SWP058R72E7T Datasheet (PDF)

 ..1. Size:823K  samwin
 swp058r72e7t.pdf pdf_icon

SWP058R72E7T

SW058R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 6.1. Size:820K  samwin
 swp058r75e7t.pdf pdf_icon

SWP058R72E7T

SW058R75E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 75V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 7.1. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf pdf_icon

SWP058R72E7T

SW058R06E7TN-channel Enhanced mode TO-220/TO-263 MOSFETTO-220 TO-263FeaturesBVDSS : 60VID : 120A High ruggedness Low RDS(ON) (Typ 5.8m)@VGS=10VRDS(ON) : 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 21 12 2 100% Avalanche Tested3 3 Application:Telecom, Computer, Inverter11. Gate 2. Drain 3. Source3General Description

 7.2. Size:813K  samwin
 swp058r65e7t swb058r65e7t.pdf pdf_icon

SWP058R72E7T

SW058R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 6.1m)@VGS=10V ID : 100A Low Gate Charge (Typ 104nC)RDS(ON) : 6.1m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

SHOW MORE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TMP15N50 | SM2F04NSU | BRCS200P03DP | STP55NE06FP | SVSP11N70DD2TR | TSM4424CS | SFB052N100C2

Keywords - SWP058R72E7T MOSFET datasheet

 SWP058R72E7T cross reference
 SWP058R72E7T equivalent finder
 SWP058R72E7T lookup
 SWP058R72E7T substitution
 SWP058R72E7T replacement

 

 
Back to Top

 


 
.