All MOSFET. SWP072R08ET Datasheet

 

SWP072R08ET Datasheet and Replacement


   Type Designator: SWP072R08ET
   Marking Code: SW072R08ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 378 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: TO220
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SWP072R08ET Datasheet (PDF)

 ..1. Size:1029K  samwin
 swb072r08et swp072r08et.pdf pdf_icon

SWP072R08ET

SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So

 6.1. Size:685K  samwin
 swb072r06et swp072r06et.pdf pdf_icon

SWP072R08ET

SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 75A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) : 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 7.1. Size:677K  samwin
 swp072r68e7t.pdf pdf_icon

SWP072R08ET

SW072R68E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descri

 7.2. Size:665K  samwin
 swp072r72e7t.pdf pdf_icon

SWP072R08ET

SW072R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 77nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descr

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