All MOSFET. SWP072R68E7T Datasheet

 

SWP072R68E7T Datasheet and Replacement


   Type Designator: SWP072R68E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 244 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO220
 

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SWP072R68E7T Datasheet (PDF)

 ..1. Size:677K  samwin
swp072r68e7t.pdf pdf_icon

SWP072R68E7T

SW072R68E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descri

 7.1. Size:1029K  samwin
swb072r08et swp072r08et.pdf pdf_icon

SWP072R68E7T

SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So

 7.2. Size:665K  samwin
swp072r72e7t.pdf pdf_icon

SWP072R68E7T

SW072R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 77nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descr

 7.3. Size:685K  samwin
swb072r06et swp072r06et.pdf pdf_icon

SWP072R68E7T

SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 75A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) : 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

Datasheet: SWP066R72E7T , SWP068R08E8T , SWP068R08ET , SWP068R68E7T , SWP069R06VT , SWP070R08E7T , SWP072R06ET , SWP072R08ET , K4145 , SWP072R72E7T , SWP075R08E7T , SWP076R68E7T , SWP078R08E8T , SWP078R08ET , SWP085R06V7T , SWP085R06VT , SWP085R68E7T .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

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