SWP076R68E7T Datasheet. Specs and Replacement

Type Designator: SWP076R68E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 222 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO220

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SWP076R68E7T datasheet

 ..1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf pdf_icon

SWP076R68E7T

SW076R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 7.6m )@VGS=10V Low Gate Charge (Typ 70nC) RDS(ON) 7.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 9.1. Size:1029K  samwin
 swb072r08et swp072r08et.pdf pdf_icon

SWP076R68E7T

SW072R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 80V High ruggedness ID 100A Low RDS(ON) (Typ 6.6m )@VGS=10V RDS(ON) 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Inverter, Li Battery Protect Board 1 1. Gate 2. Drain 3. So... See More ⇒

 9.2. Size:766K  samwin
 swb075r06et swp075r06et.pdf pdf_icon

SWP076R68E7T

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter... See More ⇒

 9.3. Size:677K  samwin
 swp072r68e7t.pdf pdf_icon

SWP076R68E7T

SW072R68E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 68V High ruggedness ID 90A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Descri... See More ⇒

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Detailed specifications: SWP068R68E7T, SWP069R06VT, SWP070R08E7T, SWP072R06ET, SWP072R08ET, SWP072R68E7T, SWP072R72E7T, SWP075R08E7T, IRLB4132, SWP078R08E8T, SWP078R08ET, SWP085R06V7T, SWP085R06VT, SWP085R68E7T, SWP086R68E7T, SWP088R06VT, SWP088R08E8T

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