All MOSFET. SWP076R68E7T Datasheet

 

SWP076R68E7T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWP076R68E7T
   Marking Code: SW076R68E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 222 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO220

 SWP076R68E7T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWP076R68E7T Datasheet (PDF)

 ..1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf

SWP076R68E7T SWP076R68E7T

SW076R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 7.6m)@VGS=10V Low Gate Charge (Typ 70nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 9.1. Size:1029K  samwin
 swb072r08et swp072r08et.pdf

SWP076R68E7T SWP076R68E7T

SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So

 9.2. Size:766K  samwin
 swb075r06et swp075r06et.pdf

SWP076R68E7T SWP076R68E7T

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 9.3. Size:677K  samwin
 swp072r68e7t.pdf

SWP076R68E7T SWP076R68E7T

SW072R68E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descri

 9.4. Size:839K  samwin
 swp070r08e7t.pdf

SWP076R68E7T SWP076R68E7T

SW070R08E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 80V High ruggedness Low RDS(ON) (Typ 7.6m)@VGS=10V ID : 100A Low Gate Charge (Typ 107nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source3General D

 9.5. Size:665K  samwin
 swp072r72e7t.pdf

SWP076R68E7T SWP076R68E7T

SW072R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 77nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descr

 9.6. Size:1051K  samwin
 swb078r08et swp078r08et.pdf

SWP076R68E7T SWP076R68E7T

SW078R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS :80V TO-263 TO-220 High ruggedness ID :60A Low RDS(ON) (Typ 7.8m)@VGS=10V RDS(ON) : 7.8m Low Gate Charge (Typ 79nC) Improved dv/dt Capability 1 2 100% Avalanche Tested 1 2 3 2 Application:Telecom, Computer,Inverter 3 1 1. Gate 2. Drain 3. Source 3 Ge

 9.7. Size:754K  samwin
 swp078r08e8t.pdf

SWP076R68E7T SWP076R68E7T

SW078R08E8TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 80V High ruggednessID : 95A Low RDS(ON) (Typ 8.4m)@VGS=10VRDS(ON) : 8.4m Low Gate Charge (Typ 98nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

 9.8. Size:685K  samwin
 swb072r06et swp072r06et.pdf

SWP076R68E7T SWP076R68E7T

SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 75A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) : 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 9.9. Size:821K  samwin
 swp075r08e7t swb075r08e7t.pdf

SWP076R68E7T SWP076R68E7T

SW075R08E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggedness Low RDS(ON) (Typ 8m)@VGS=10V ID : 90A Low Gate Charge (Typ 95nC)RDS(ON) : 8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source

 9.10. Size:738K  samwin
 sw075r06et swb075r06et swp075r06et.pdf

SWP076R68E7T SWP076R68E7T

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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