SWP100R10VT
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWP100R10VT
Marking Code: SW100R10VT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 208
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 69
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 73
nC
trⓘ - Rise Time: 87
nS
Cossⓘ -
Output Capacitance: 259
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0118
Ohm
Package:
TO220
SWP100R10VT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWP100R10VT
Datasheet (PDF)
..1. Size:836K samwin
swp100r10vt swi100r10vt swu100r10vt.pdf 
SW100R10VT N-channel Enhanced mode TO-220/TO-251/TO-262 MOSFET Features TO-220 TO-251 TO-262 BVDSS : 100V High ruggedness ID : 69A Low RDS(ON) (Typ 11m)@VGS=4.5V (Typ 9.5m)@VGS=10V RDS(ON) : 11m @VGS=4.5V Low Gate Charge (Typ 73nC) 9.5m @VGS=10V Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 2 3 3 3
8.1. Size:701K samwin
swp100n10b.pdf
SW100N10BN-channel Enhanced mode TO-220 MOSFETFeaturesBVDSS : 100VTO-220 High ruggedness ID : 120A Low RDS(ON) (Typ 6.7m)@VGS=10VRDS(ON) : 6.7m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 100% Avalanche Tested1 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2. Drain 3. Source3General
8.2. Size:624K samwin
swp100n10a.pdf
SW100N10A N-channel Enhanced mode TO-220 MOSFET Features BVDSS : 100V TO-220 High ruggedness ID : 100A Low RDS(ON) (Typ 5.9m)@VGS=10V RDS(ON) : 5.9m Low Gate Charge (Typ 127nC) Improved dv/dt Capability 2 100% Avalanche Tested Application:Synchronous Rectification, 1 2 Li Battery Protect Board, Inverter 3 1 1. Gate 2. Drain 3. S
9.1. Size:1319K samwin
swf10n65d swmn10n65d swy10n65d swp10n65d swu10n65d swj10n65d.pdf
SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1
9.2. Size:1355K samwin
swf10n50k swp10n50k swt10n50k swn10n50k swd10n50k.pdf
SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS : 500V ID : 10A High ruggedness Low RDS(ON) (Typ 0.26)@VGS=10V RDS(ON) : 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application:LED, PC Power, Cha
9.3. Size:1328K samwin
swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf
SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) :0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio
9.4. Size:728K samwin
sw10n65 swp10n65 swf10n65.pdf
SAMWINSW10N65N-channel MOSFETTO-220F TO-220BVDSS : 650VFeaturesID : 10.0A High ruggednessRDS(ON) : 1.1ohm RDS(ON) (Max 1.1)@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 122 2 100% Avalanche Tested3 31. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.This
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