SWP100R10VT - описание и поиск аналогов

SW100R10VT N-channel Enhanced mode TO-220/TO-251/TO-262 MOSFET Features TO-220 TO-251 TO-262 BVDSS 100V High ruggedness ID 69A Low RDS(ON) (Typ 11m )@VGS=4.5V (Typ 9.5m )@VGS=10V RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 73nC) 9.5m @VGS=10V Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 2 3 3 3

SW100N10B N-channel Enhanced mode TO-220 MOSFET Features BVDSS 100V TO-220 High ruggedness ID 120A Low RDS(ON) (Typ 6.7m )@VGS=10V RDS(ON) 6.7m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2. Drain 3. Source 3 General

SW100N10A N-channel Enhanced mode TO-220 MOSFET Features BVDSS 100V TO-220 High ruggedness ID 100A Low RDS(ON) (Typ 5.9m )@VGS=10V RDS(ON) 5.9m Low Gate Charge (Typ 127nC) Improved dv/dt Capability 2 100% Avalanche Tested Application Synchronous Rectification, 1 2 Li Battery Protect Board, Inverter 3 1 1. Gate 2. Drain 3. S

SW10N65D N-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFET Features TO-262 TO-262N TO-220F TO-220SF TO-220FT TO-220 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.9 )@VGS=10V Low Gate Charge (Typ 35nC) RDS(ON) 0.9 Improved dv/dt Capability 100% Avalanche Tested 2 Application UPS,Inverter, 1 1 1 2 2 1 1 1

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS 500V ID 10A High ruggedness Low RDS(ON) (Typ 0.26 )@VGS=10V RDS(ON) 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application LED, PC Power, Cha

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio

SAMWIN SW10N65 N-channel MOSFET TO-220F TO-220 BVDSS 650V Features ID 10.0A High ruggedness RDS(ON) 1.1ohm RDS(ON) (Max 1.1 )@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This